2007 Workshop Information                 


Each year CS MANTECH provides many opportunities for sharing technical knowledge and learning from one another in an interactive environment. 
Be sure to take advantage of your first chance to do so by attending the workshop this year. 

Note our new lower price ($100 off) for the workshops!


 The sessions will be presented on Monday May 14 by industry and university experts who have a wealth of knowledge and hands-on experience.  You will improve your industry outlook and basic understanding of important items in various fields.  Parallel sessions will be offered, covering a wide range of topics including semiconductor device space flight qualification, wide-bandgap processing, characterization, simulation and even intellectual property management.  The workshop schedule can be found on page 17 of this Advance Program.

The first session will begin with “Surface and Thin Film Analysis for Compound Semiconductors” by Dr. Yumin Gao of Evans Analytical Group.  This workshop will present many commonly used surface and thin film analytical techniques (SIMS, TOF-SIMS, RBS, Auger, XPS/ESCA, LEXES, TXRF, Raman/FTIR etc) and their applications in the compound semiconductors industry.   After providing background knowledge of these techniques such as principle instrumentation and analytical conditions, Dr. Gao will describe their applications in materials research, process development, failure analysis, and production quality control through numerous examples in the areas of pHEMTs, HBTs, LEDs and LDs (GaAs, InP, GaN and SiC). This tutorial will increase your knowledge of analytical methods and your understanding of how these techniques can be applied most effectively to your specific problem solving and will provide a starting point for your further study.

Next, “Space Qualification for Semiconductor Devices” will be explained by Dr. Sammy Kayali of the NASA Jet Propulsion Lab.  His tutorial will begin with a description of the environmental, reliability, and operational challenges for space applications.  A description of space qualification requirements and associated product testing and evaluation will be presented.  Semiconductor device processing, test, and characterization requirements along with supporting data and application support will also be presented.  To finish, Dr. Kayali will review practical considerations for development of qualification plans for space applications.

Then, by popular demand, Mr. Harvey Kauget will tell us all about the part of our business that scientists and engineers rarely understand.  In “Intellectual Property:  Know How and Why,” Mr. Kauget will provide an overview of the basic forms of IP, developing an IP strategy, IP licensing and IP litigation issues.  You will learn how to recognize and develop IP, and you will understand the issues of enforcing and/or licensing your IP.

In a parallel session with the above topics, three other highly interesting topics will be covered.  First, Professor M. Kalam of the University of Texas at Dallas will describe in detail “High-Speed, Next-Generation Networks and the Role of the Semiconductor Industry”.  His workshop will begin with a background of various types of data and telecommunications networks and their evolution.  The current networking technologies and the future trends will be discussed in detail.  The contributions of the semiconductor industry in developing networking technologies will be elaborated.  Dr. Kalam will discuss the close relationships that exist between the semiconductor industry and the networks of the future.

Following optical networks, there will be two wide-bandgap-related workshops.  First, “Application of MOS Technology to Silicon Carbide Devices” will be presented by Dr. Mrinal Das of Cree, Inc.  Silicon carbide (SiC) stands unique amongst the family of wide bandgap semiconductors due to the presence of a high quality, native oxide.  Formed via thermal oxidation, this silicon dioxide layer opens the door to the vast legacy of MOS devices successfully developed on silicon (e.g., MOSFETs, DMOSFETs, UMOSFETs, LDMOSFETs, IGBTs, CCDs, DRAM, and CMOS circuitry).  This workshop will cover the MOS fundamentals (kinetics, process technology, and characterization), including the pitfalls of simple application of Si MOS characterization to wide bandgap materials.  Following this, Dr. Das will survey the historical progress and future potential of MOS-based silicon carbide devices to revolutionize power and microwave electronics.

Next, Professors Jim Cooper, Jr. and Mike Capano of Purdue University will survey silicon carbide material processing and high-voltage device design using a historical perspective.  They will review the materials challenges involved in the fabrication of electronic devices in the wide-bandgap semiconductor silicon carbide.  Complex fabrication issues include ion implantation and activation, thermal oxidation, MOS properties, and the formation of Ohmic contacts.  Material issues include defects and dislocations in epitaxial material, control of doping and surface morphology during epi growth, and point defects that limit the minority carrier lifetime.  The payoff is new classes of circuits that can be fabricated with SiC unipolar and bipolar devices.

To complete the workshop with a non-parallel session, Olin Hartin of Freescale Semiconductor will greatly increase our understanding of “TCAD Simulation of Compound Semiconductor Electronic Devices”. This workshop will begin with a review of the fundamentals of TCAD simulation and available tools.  Then, there will also be a discussion of what to do prior to initiation of a simulation project and what to (and not to) expect.  This will be followed by a brief overview of processing concepts as they relate to process simulation.  There will then be a detailed discussion of process and device simulation of FETs and Bipolars.  In this discussion, significant attention will be paid to calibration and what that really means.  Finally, there will be some discussion of large signal simulation.  Some special topics like design for manufacturing (DFM) may be discussed, time permitting.

Please see our website, www.csmantech.org for more information.  The Workshop Registration fee covers all workshops.  Except for student registration, the Workshop is not included in the Conference Registration Fee.

Monday, May 14

Chair:  Scott Sheppard, Cree, Inc.

8:00 AM Welcome/Introductions
8:15 AM Surface and Thin Film Analysis for Compound Semiconductors
   Yumin Gao, Evans Analytical Group
8:15 AM High-Speed, Next-Generation Networks and the Role of the Semiconductor Industry
   Professor M. Kalam, University of Texas at Dallas
10:00 AM


10:15 AM Space Qualification for Semiconductor Devices
Sammy Kayali, NASA Jet Propulsion Lab
10:15 AM Application of MOS Technology to Silicon Carbide Devices
Mrinal Das, Cree, Inc.
1:15 PM Intellectual Property:  Know How and Why
  Harvey Kauget, Phelps Dunbar, LLP
1:15 PM Silicon Carbide Material, Processing and Device Historical Overview
  Professor Jim Cooper, Jr. and Mike Capano, Purdue University
3:00 PM


3:15 PM TCAD Simulation of Compound Semiconductor Electronic Devices
  Olin Hartin, Freescale Semiconductor


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