2000 Digests

 
 
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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"
2000 On-line Digest Table of Contents
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1a Compound Semiconductor Requirements for Fiber Optic Telecommunications
Mike Scott, Nortel Networks
Abstract
1b Present and Future of GaAs Technologies in Japan
Masumi Fukuta, Fujitsu Quantum Devices Ltd.

Abstract

2a

A New Production Solution for High Selective and Low-Damage Etching of GaAs-Based Devices
Jewon Lee, Mike Debre, Dave Johnson, Jay Sasserath, Plasma-Therm, Inc.

Abstract

2b

Improvement of Surface Morphology for InGaP HBT
G.K. Essilfie, T.S. Low, Hengchang Chou, D.K. Kuhn, M. DeLaCruz, D.C. D'Avanzo, Agilent Technologies

Abstract

2c

III-V Dry Etching by CCD-controlled in situ Interferometry
W. John, L. Weixelbaum, H. Wittrich, G. Frankowski, J. Wurfl, Ferdinand-Braun Institute.

Abstract

2d

Electrochemical Etching Impact On GaAs Process, Mask Design and Device Performance
I. Hallakoun, T. Boterashvili, G. Bunin, Y. Shapira

Abstract

2e

Corrosion Behavior and Surface Studies of GaAs in Acidic Solutions
C.A. Steer, J.L. Luo, D.G. Ivey.  Dept. of Chemical and Materials Engineering, University of Alberta

Abstract

3a

InP HBT Technology and Applications
A.K. Oki, D.C. Streit, K.W. Kobayashi, A. Guiterrez-Aitken, L.T. Tran, T. Block, P. Chin, P.S. Grossman, F. Yamada, D. Sawdai, M.D. Lammert, M. Wojtowicz, E. Kaneshire, K. Sato, G. Lesslie, L. Yang, H.C. Yen, TRW Inc.

Abstract

3b

Advanced InP/InGaAs HBTs Technology for Low-Power Lightwave Communication Circuit Applications (Invited)
S. Yamahata, H. Nakajima, M. Ida, E. Sano, Y. Ishii.  NTT Photonics Laboratories

Abstract

3c WITHDRAWN  

3d

RF-LDMOS: A Silicon-Based, High Power, High Efficiency Linear Power Amplifier Technology.
W. Burger, E. Agyekum, O. Ayoola, G. Bouisse, W. Brakensiek, H. Brech, B. Davidson, C. Dragon, G. Formicone, G. Funk, E Krvavac, D. Lamey, W.W. Lau, G. Ma, B. Pryor, X. Ren.  Motorola, Inc.

Abstract

4a

Compound Semiconductors in Wireless Communications Systems
Anthony A. Triolo, Lucent Technolgies

Abstract

4b Integration of GaAs MMIC Technology in Commercial mm-Wave SATCOM and LMDS Transceivers
Roberto Alm, Raytheon RF Components
Abstract

4c

Very High Efficiency and Low Cost Power Metamorphic HEMT MMIC Technology
P.C. Chao, K.C. Hwang, D.W. Tu, J.S.M. Liu, O. Tang, K. Nichols.  Sanders, A Lockheed Martin Company

Abstract

4d

Packaging Technologies for RFIC's: Increasing Integration
Albert C. Imhoff, Jr.  M/A-COM Semiconductor

Abstract

5a

Etching InP with H2, BCI3 and Ar
Edwin Sabin, TRW

Abstract

5b

A Design of Experiment for High Throughput GaAs Via Etch by Reactive Ion Etch
Juifen Lee, Hungchun Tsai, Yee-Shyi Chang, National Tsing-Hua University

Abstract

5c

Breaking the 1000 Wafers/Week Barrier Through Substrate Via Process
K.M. Adams, L.S. Klingbeil, Motorola, Inc.

Abstract

5d

Adapting Electrostatic Chucks for Dry Etching of GaAs
D. Tossell, K. Powell, M. Bourke, Y Song.  Trikon Technologies Ltd.

Abstract

6a

A Comparative Study of As, Sb and P-based Metamorphic HEMT
D. Lubyshev, W.K. Liu, T. Stewart, A.B. Cornfeld, J. Patton, J. Mirecki Millunchick, W. Hoke, C. Meaton, K. Nichols, S.P. Svensson, Quantum Epitaxial Designs, Inc.

Abstract

6b

MOVPE Grown Metamorphic HEMT Epitaxial Wafers
T. Tanaka, T. Hashimoto, M. Washima, H. Sakaguchi.  Hitachi Cable, Ltd.

Abstract

6c

Material quality and uniformity issues of MOVPE-grown GaInP/GaAs HBTs
K. Kurpas, F. Brunner, M. Achouche, T. Spitzbart, E. Richter, T. Bergunde, D. Rentner, M. Mai, J. Wurfl, M. Weyers.  Berdinand-Braun Institute

Abstract

6d WITHDRAWN  

6e

Productive Availability of Non-destructive Thickness Measurement Techniques
Ryo Hattori and Tomoki Oku.  Mitsubishi Electric Corp.

Abstract

6f

New Barrel Type MOVPE Reactor for 6" Epitaxial Wafers
T. Osada, N. Fukuhara, T. Takada, M. Hata.  Sumitomo Chemical Co., Ltd.

Abstract

6g

Contactless Room Temperature Characterization of PHEMT Structures Using Surface Photovoltage Spectroscopy.
M. Leibovitch, I. Hallakoun, S. Solodky, N. Ashkenasy, G. Bunin, Y. Rosenwaks, Y. Shapira.  ELTA Electronics Industries Ltd. and Tel-Aviv University

Abstract

6h

Forecasting Methods for MMIC RF Yield
R. Tsai, M. Nishimoto, R. Lai.  TRW, Inc.

Abstract

6i

New On-Wafer Digital Laser Trimming Technique for Current Adjustment of GaAs FET
Y. Iwasaki, H. Furukawa, T. Tanaka, D. Ueda.  Matsushita Electronics Corp.

Abstract

6j

Assessing Circuit Hermeticity By Electrolysis
W. Roesch, S. Peterson, A. Poe, S. Brockett, S. Mahon, J. Bruckner.  TriQuint Semiconductor, Inc.

Abstract

6k

A Better Way to Predict Reliability from Lifetest Data Using a Regression Technique
J. Scarpulla, D. Eng, D. Leung.  TRW Inc.

Abstract

7a

Reliability of InGaP-Emitter HBTs
B. Yeats, P. Chandler, M. Culver, D. D'Avanzo, G. Essilfie, C. Hutchingson, D. Kuhn, T. Low, T. Shirley, S. Thomas, W. Whiteley.  Agilent Technologies

Abstract

7b

Characterization of InGaP/GaAs HBTs under Temperature and Current Stress
T. Oka, K. Hirata, H. Takazawa, I. Ohbu.  Hitachi,Ltd.

Abstract

7c

Performance and Reliability of an Advanced Production GaAs HBT Process Technology
F.M. Yamada, A.K. Oki, D.C. Streit, B.L. Hikin, E.N. Kaneshiro, M.D. Lammert, L.T. Tran, T.R. Block, P.C. Grossman, J.R. Scarpulla, A.L. Guitierrez-Airken.  TRW Inc.

Abstract

7d

Base Current Investigation of the Long-Term Reliability of GaAs-Based HBTs
R.E. Welser, M. Chaplin, C.R. Lutz, N. Pan.  Kopin Corporation

Abstract

7e

Transient Characteristics of InGaP/GaAs/AIGaAs Double Heterojunction Bipolar Transistors
C.R. Lutz, R.E. Welser, N. Pan.  Kopin Corporation

Abstract

8a

Process Development on 0.1-mm Gat E/D MESFETs with fT and fmax> 100 GHz Using Direct Ion Implantation for Low Power IC Applications
Z. Tang, H. Hsia, D. Becher, D. Caruth, M. Feng
Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL  61801

Abstract

8b

Cost Effective MeV Isolation Mask for Heterojunction Bipolar Transistors
J. Gillespie, C. Bozada, R. Dettmer, R. Fitch, K. Nakano, J.Sewell, D. Via  Wright-Patterson, AFB

Abstract

8c

Direct bonding of heterogeneous wafers using surface activated bonding method at room temperature
T. Watanabe, T.R. Chung, T. Suga.  University of Tokyo

Abstract

8d

Zero-Offset Low-Knee-Voltage GaInP/GaAs Collector-up Tunneling-Collector Heterojunction Bipolar Transistors for High-Efficiency High Power Amplifiers
K. Mochizuki, R.J. Welty, P.M. Asbeck.  University of California, San Diego.

Abstract

8e

Optimization of HIGFETs on LT-GaAs Buffer
J.K. Abrokwah, M. Sadaka, B. Bernhardt.  Motorola, Inc.

Abstract

8f

Utilization of Design of Experiments Combined with Technical Knowledge to Increase Manufacturability of HIGFET Device
Eugene Huang, Mark R. Wilson.  Motorola, Inc.

Abstract

8g

Highly accelerated stressing of GaAs bulk resistors
E. Sabin, J. Scarpulla, Y.C. Chou, C.S. Wu.  TRW

Abstract

8h

Device Characteristics of Dry Etch AlGaAs/InGaAs HEMTs Fabricated by Inductively Coupled Plasma Etching
J.H. Lee, H.W. Yoon, C.W. Lee, S.S. Choi, S.J. Maeng, K.H. Lee, A. Goodyear.  Electronics and Telecommunications Research Institute.

Abstract

9a

Transitioning Technological Innovation - A Market Perspective
Brian R. Smith.  Booz Allen Hamilton, Inc.

Abstract

9b

Commercial Wide Bandgap RF Power Devices - Fact or Fiction?
C. E. Weitzel.  Motorola, Inc.

Abstract

9c

GaN Electronic Devices for Microwave Power Applications
S.C. Binari, K. Ikossi-Anastasiou, J.A. Roussos, D. Park, D.D. Koleske, A.E. Wickenden, R.L. Henry.  Naval Research Laboratory

Abstract

9d

Business Opportunities for GaN Devices
Fred A. Blum.  Nitres, Inc.

Abstract

10a

Processing and Properties of PdGe Ohmic contacts to GaAs
A. MacInnes, R. Morton, F. Radulescu, J. McCarthy.  Triquint Semiconductor

Abstract

10b

Electron-beam Irradiation during Schottky Gate Metallization of GaAs FET
T. Ohshima, H. Ozawa, H. Moriguchi, R. Shigemasa, M. Tsunotani, T. Kumura.  Oki Electric Industry

Abstract

10c

A Manufacturable Multi-Level Interconnect Process Using Twp Layers of 4.5mm-Thick Plated Gold
J.W.L. Dilley and S.K. Hall.  M/A-COM

Abstract

11a

High Performance Metamorphic HEMTs on 100-mm GaAs Substrate
M. Kao, E.A. Beam III, M. Muir, P. Saunier, H. Tserng, W.R. Frensley.  TriQuint Semiconductor

Abstract

11b

High-Performance High-Gain Amplifiers Based on Metamorphic GaAs HEMT's
K. van der Zanden, D. Schreurs, R. Vandersmissen, G. Borghs.  IMec

Abstract

11c

Metamorphic InAlAs/InGaAs HEMT MMIC Technology on GaAs Substrate: From Promis to Reality
M. Chertouk, F. Benkhelifa, M. Dammann, M. Walther, K. Kohler, G. Weimann.  Fraunhofer Institue for Applied Solid State Physics

Abstract

11d

GaAs Metamorphic HEMT (MHEMT): The Ideal Candidate for High Performance, Millimeter Wave Low Noise and Power Applications
C.S. Whelan, P.F. Marsh, W.E. Hoke, T.E. Kazior.  Raytheon RF Components

Abstract

12a

Riding the Wireless Wave with 150mm GaAs Manufacturing
M.R. Wilson, K. Adams, E. Huang.  Motorola, Inc.

Abstract

12b

0.1 mm InGaAs/AlGaAs HEMT MMIC Production Process for High Performance Commeeridal Ka-band LNAs
R. Lai, P.H. Liu, J. Scarpulla, R. Tsai, D. Leung, D. Eng, R. Grundbacher, M. Aust, J. Lee, M. Hoppe.  TRW Inc.

Abstract

12c

Establishment of A Full Functional Six-inch PHEMT Manufacturing Wafer Fab
Y.C. Pao, D. Glajchen.  Filtronic Solid State, Inc.

Abstract

 


 

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