2002 Digests

 
 
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The
International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"
2002 On-line Digest Table of Contents

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1a 2002: The Market in Transition
Earl Lum. CIBC
Abstract
1b Overview of Emerging Compound Semiconducator Technologies
Keith Buchanan, Trikon Technologies

Abstract not available

1c

The Evolution of Interconnect Technology for Silicon Integrated Circuitry
Keith Buchanan, Trikon Technologies

Abstract

2a

Development of Circuits in Indium Phosphide for Communication at 40Gbit/s and Above
Alan D. Huelsman, Vitesse Semiconductor

Abstract

2b

InP and GaAs Components for 40 Gbps Applications
Mansoor Siddiqui, Greg Chao, Aaron Ohi, Augusto Guitierrez-Airken, Barry A;llen, Alex Chau, Wendell Beall, Matt D'Amore, Bret Oyama, Dennis Hall,
Richard Lai and Dwight Streit
, Velocium

Abstract

2c

Performance of InP/InGaAs Heterojunction Bipolar Transistors for 40 Gb/s OEICApplications
Shyh-Chiang Shen, David C. Caruth & Milton Feng, Xindium Technologies & University of Illinois

Abstract

2d

Manufacturable Commercial 4-inch InP HBT Device Technology
N. X. Nguyen, J. Fierro, G. Peng, A. Ly, and C. Nguyen, GCS

Abstract

2e

A Non-Self Aligned InP HBT Production Process
Mike Sun, Juntao Hu, Wu-Jing Ho, Gary Hu, Jiang Li, Vicki Weng, Wei-Ming Xu, June Nguyen, Chang-Hwang Hua and Ding Day, Alpha Industries

Abstract

3a

Accelerated Reliability Testing of GaAs/InGaP HBTs
Bob Surridge, Jeff Law, Brian Oliver, Wojciech Pakulski, Heidi Strackholder, Michel Abou-Khalil and Guy Bonneville, Nortel Networks Optical Components

Abstract

3b

Wafer-Level Reliability Tests of InGaP HBTs Using High Current Stress
Frank H.F. Chau, Chien-Ping Lee, Clarence Dunnrowicz and Barry Lin, EiC Corporation

Abstract

3c

Failure analysis of electrostatic discharge in InGaAs/AlGaAs PHEMTs
Chiharu Nozaki, Masanori Ochi, Yoshitomo Sagae, Takao Noda, Yoshiaki Kitaura, Toshiba

Abstract not available

3d A Power Law Model for Assessment of Hot Electron Reliability in GaAs MESFETs and AlGaAs/InGaAs pHEMTs
Val Kaper, Peter Ersland, M/A – COM
Abstract

3e

Reliability Study of Low-Voltage RF MEMS Switches
D. Becher, R. Chan, M. Hattendorf, M. Feng, Univ. of Illinois

Abstract

4a

2nd Generation Device Modeling for MMIC Design and Manufacturability
R. Tsai, M. Nishimoto, W. Akiyama, J. Chang, D. Ko, A. Schiaroli, R. To, L. Tran, M. Truong, K.H. Yen, and R. Lai, TRW

Abstract

4b

New method to monitor the frequency-dispersion in InGaAs/AlGaAs PHEMTs
T. Izumi, T. Ohshima, M. Tsunotani and T. Kimura, Oki Electric

Abstract

4c

Nondestructive Characterization of epitaxial structure for High Electron Mobility Transistors
Mikhail K Mikhov, Eric S. Johnson, Celicia Della, Brian J.Skromme, Ellen Lan, Mark Rittgers, Mike Pelczynski, Motorola  & Arizona State Univ.

Abstract

4d

Contactless Electron Mobility Evaluation of Semi-Insulating GaAs and InP Wafers
Rudolf Stibal, Ulrich Kretzer and Wolfgang Jantz, Fraunhofer Institut &  Freiberger

Abstract

4e

6 Inch GaAs Fab Conversion Cost Effectiveness Evaluation Process
Ariel Meyuhas, MAX International

Abstract

5a

Dielectrically defined optical T-gate for high power GaAs pHEMT
D. Fanning, L. Witkowski, J. Stidham, H.-Q. Tserng, M. Muir & P. Saunier, TriQuint Semiconductors

Abstract

5b

Effect of Intentional Surface Oxidization on Power Performance in Planer Type AlGaAs/GaAs MESFET
T. Kagiyama, Y. Saito, K. Otobe, S. Nakajima, Sumitomo Electric.

Abstract

5c

Novel Nitride Passivation on 0.15um Pseudomorphic GaAs HEMTs Using High-Density Inductively Coupled Plasma CVD (HD-ICVD)
Y.C. Chou, R.Lai, C.P.Li, Peter Nam, H.K. Kim, Y. Ra, R. Grundbacher, E. Alers, M. Barsky, M. Biedenbender, A. Oki, TRW., Bethel Materials Research & UC, Irvine.

Abstract

5d

Damage Free Etching for Gate Process of GaAs MESFET by ICP Method
Y. Tosaka, S. Nakajima, Sumitomo Electric

Abstract

5e

A highly Uniform and High Throughput, Double Selective pHEMT Process Using an All Wet Etch Chemistry
Kamal Alavi, Serap Ogut, Peter Lyman, William Hoke, Mike Borkowski, Raytheon RF Components Company

Abstract

6a

Benefits and Challenges in Decreasing GaAs Through Substrate Via Size and Die Thickness
Henry Hendriks, Allen Hanson, Thomas Lepkowski, Anthony Quaglietta, Bharat Patel, M/A - COM: Tyco Electronics

Abstract

6b

A New Alternative for Temporary Wafer Mounting
David J. Mould, John C. Moore, Motorola & General Chemical Corporation

Abstract

6c

Capability and Cycle Time Improvements in Nortel Network’s Substrate Via Fab
D. Bonneau, P. Borkowski, R. Shelley, A. Fortier, M. C. Young, C. Fragos, S. Anderson, Nortel Networks Optical Components & Trikon Technologies Ltd.

Abstract

6d

Through Substrate Via Etching and Cleaning for High Volume Production Demands
Keri L. Costello, Carolina S. Rios-Wasson, Terry K. Daly, John C. Moore, Motorola & General Chemical Corporation

Abstract

6e

Characterization of a Manufacturable High Rate GaAs Via Etch Process
F. Clayton, R. Westerman, and D. Johnson, Unaxis USA, Inc. & Motorola InC.

Abstract

7a

Implanted MESFETs – Still Going Strong
Martin J. Brophy, Richard L. Campbell and William Davenport, TriQuint Semiconductors

Abstract

7b

Manufacturable GaAs High Power FET for W-CDMA Base Station
E. Mitani, H. Takahashi, H. Haematsu, K. Inoue, K. Ebihara and J. Fukaya, Fujitsu

Abstract

7c

Wide Bandgap Semiconductors: Moving from Research to Production
John Zolper, DARPA/MTO

Abstract

7d

GaAs pHEMT Technology for Optical Communication System
Tamotsu Kimura, Tomoyuki Ohshima, Masanori Tsunotani, Toshikiko Ichioka and Shohei Seki, Oki Electric Industry

Abstract

7e

Manufacturable 0.15 um PHEMT Process for High Volume and Low Cost on 6” GaAs Substrates: The First 0.15 um PHEMT 6”GaAs Foundry Fab
M. Chertouk, D. W. Tu, P. Meng, C. G. Yuan, W. D. Chang, C. Y. Kuo, C. C. Chang, A. Chang, H. H. Chen, P. C. Chao, WIN Semiconductors

Abstract

8a

Silicon Nitride MIM Capacitor Reliability for Multiple Dielectric Thickness
John Beall, Ken Decker, Keith Salzman, and Gergana Drandova, TriQuint Seiconductors

Abstract

8b

Polarization Behavior of GaAs in Electrolyte Solutions
Y. Huang, J.L. Luo, D.G. Ivey, University of Alberta

Abstract

8c

Multipulse Electroplating of Au/Sn Alloys onto Patterned Wafers for Packaging Applications
A.He, D.G. Ivey, S. Akhlaghi, University of Alberta

Abstract

8d

Using Neural Networks for RHEED Modeling of Interfaces in AlGaSb-InAs HEMT Devices
Gregory E. Triplett, Gary S. May, April S. Brown, Georgia Institute of Technology

Abstract

8e

Prediction of Maximum Temperature Rise in Multi-Finger Transistor Structures using Normalization
David J. Walkey, Dritan Celo, Tom J. Smy, Carleton University

Abstract

8f

Moiré Interferometry for Microelectronics Packaging Interface Fatigue Reliability
Heng Liu, A.N. Cartwright, Cemal Basaran, University of Buffalo

Abstract

8g

Ultrafast Spectroscopy of InGaN Quantum Wells for the Development of Efficient Emitters
Fei Chen, M.C. Cheung, A.N. Cartwright, Paul M. Sweeney, Jeffrey S. Flynn & David Keogh, University of Buffalo & ATMI Inc.

Abstract

8h

Active Laser Device Characterization by Scanning Capacitance Microscopy
M. W. Xu, N. Duhayon, W. Vandervorst, Catholic Univ. of Leuven. IMec

Abstract

8i

Direct Observation of Gain Collapse Phenomena in Multi-Finger HBTs Using Digital Cameras
Toru Sugiyama, Yorito Kakiuchi, Kouhei Morizuka, Yoshiaki Kitaura, Toshiba Corp

Abstract

8j

Characterization of Electrochemically Deposited Gold for Back-Side Processing of GaAs Wafers
Erik Young, Henry Hendriks, Gabriel Rojano, Rajesh Baskaren, Tom Ritzdorf, John Klocke, Semitool Inc.  & M/A-Com: Tyco Electronics

Abstract

8k

Cutting GaAs Devices Without Blade Dressing
Zi Qing (Tony) Wang, Motorola

Abstract

8l

In-line Optical and X-ray Measurements of Thickness and Composition for Manufacturing of Heterostructure Bipolar Transistors
Stefan Zollner, Mariam G. Sadaka, N.V. Edwards, Candi S. Cook, Q. Xie, Ha T. Le, Jill Hildreth, and Andrew S.Morton, Motorola

Abstract

8m

In-Situ Optical Thickness Control of Ion Beam Deposited Coatings for the Telecommunications Industry
Adrian J. Devasahayam, Ivo Agatic, Adrian Celaru, Warren Cheesman, Boris Druz, Roger Fremgen and Hari Hegde, Veeco Instruments

Abstract

8n

Simple Process for 0.5um Lift-off Applications in the GaAs and MEMS Industries
Medhat Toukhy, Salem Mullen, Ping-Hung Lu, Gregg Espin, Jeff Griffin. David Maurer, Clariant Corporation & Motorola

Abstract

10a

III-V MOVPE for RF power applications
Peter Frijlink, OMMIC

Abstract

10b

High Performance AlGaN/GaN HEMTs on Semi-Insulating SiC Substrates Grown by Metalorganic Chemical Vapor Deposition
Michael M. Wong, Delphine Sicault, Uttiya Chowdhury, Jonathan C. Denyszyn, Ting Gang Zhu and Russell D. Dupuis and David T. Becker  & Milton Feng, University of Texas & The University of Illinois

Abstract

10c

4" InP based HEMT epitaxial wafers grown by MOVPE for volume production
Hajime Momoi, Koji Kakuta, Eiji Ikeda and Hirofumi Nakata,  Nikko Materials.

Abstract

10d

Base Layer Band Gap Engineering for III-V Bipolar Devices
P. M. DeLuca, C. R. Lutz, B. E. Landini, M. Chaplin, K. S. Stevens and R. E. Welser, Kopin Corporation

Abstract

10e

High Volume Manufacturing of InGaP/GaAs HBT Wafers
J. Silver, P. Cooke, E. Armour, S. Ting, L. Kapitan, M. Ferreira, D. Tilli, C. Palmer, Emcore Electronic Materials

Abstract

11a

Introduction of Complete Sputtering Metallization in Conjunction with Dry CO2 Snow Lift-Off for High Volume GaAs Manufacturing
Fabian Radulescu, Paul Miller, Liam Cunnane, Mark Harris, Hien Lam, Charles Bowers, TriQuint Semiconductor & Trikon Technologies & eco Snow Systems.

Abstract

11b

Methods for Monitoring Passivation Ledges in a Manufacturing Environment
P.J. Zampardi, Lance Rushing, Pingxi Ma, and M.F. Chang, Conexant Systems & UCLA

Abstract

11c

Film Stress versus Plating Rate for Pulse-Plated Gold
P.H. Lawyer and C.H. Fields, HRL Laboratories

Abstract

11d

Low Cost, High Throughput Hot Plate Track System Used in 150 mm GaAs Ohmic Metal Alloying
Moreen Minkoff, Fabian Radulescu, Brad Avrit & Dong Nguyen, TriQuint Semiconductors & C&D Semiconductor Services

Abstract

11e

Design of Experiments to Achieve High Yield Manufacturing at 6-inch Foundry
H.C. Chou, M.C. Liao, J.L. Hsu, L.S. Yip, Y.S. Wu, J.C. Chang, Y.C. Wang, C.G. Yuan, L.J. Meng, W.H. Chu, T.C. Lee, C.B. Ho, P. Chen, J.M. Lee, P.C. Chao, and C.S. Wu, WIN Semiconductors Corporation

Abstract

12a

Manufacturing Technology of InGaP HBT Power Amplifiers for Cellular Phone Applications
R. Hattori, S. Suzuki, Y. Yamamoto, S. Miyakuni, N. Ogawa, T. Oku, H. Seki and T. Shimura, Mitsubishi Electric Corp.

Abstract

12b

GaAs Components for 60 GHz Wireless Communication Applications
Mansoor Siddiqui, Manny Quijije, Al Lawrence, Brian Pitman, Richard Katz, Phu Tran, Alex Chau, Deborah Davison, Salah Din, Richard Lai and Dwight Streit, Velocium

Abstract

12c

High Yield InGaP HBT Manufacturing Technology on 150-mm GaAs Wafers
Y.C. Wang, H.C. Chou, T.C. Tsai, M.C. Tu, Y.J. Chen, P.C. Chao, C. H. Chen, S. M. Liu and C.S. Wu, WIN Semiconductors Corporation

Abstract

12d

Development of Motorola's InGaP HBT Process
Mariam Sadaka, Darrell Hill, Fred Clayton, Haldane Henry, Colby Rampley, Jon Abrokwah and Ric Uscola, Motorola

Abstract

12e

Sub-Micron Scaling of High-Speed InP/InGaAs SHBTs Grown by MOCVD using Carbon as the p-Type Dopant
M.L. Hattendorf, Q.J. Hartmann, K. Richards, M. Feng, University of Illinois & Epiworks

Abstract

13a

A Comparative Study of DC and Microwave Characteristics of Lattice-matched InP HBTs and Metamorphic HBTs Grown by MBE
J.M. Fastenau, A.B. Cornfeld, W.K. Liu, H. Yang, H. Wang, K. Radhakrishnan, J. C. M. Hwang. IQE Inc, Nanyang Technological University & Lehigh University

Abstract

13b

6-inch MOVPE Metamorphic HBT with Low Indium Compsition InGaAs base and collector for High Power Application
Y. Otoki, T. Tsuji, N. Sato, T. Tanaka, H. Kamogawa and Y. Sasaki, Hitachi Cable

Abstract

13c

Potential of Metamorphic HEMT with 0.25um Refractory Metal Gate for Power Application in Ka-Band
F. Benkhelifa, R. Quay, R. Lösch, K. Schäuble, M. Dammann,  M. Mikulla, G. Weimann, Fraunhofer Institute for Applied Solid State Physics

Abstract

13d

GaAs-Based Metamorphic Technology
R. E. Leoni III, W. E. Hoke, C. S. Whelan, P. F. Marsh, P. C. Balas II, J. G. Hunt, K. C. Hwang, S. M. Lardizabal, C. Laighton, S. J. Lichwala, Y. Zhang, and T. E. Kazior, Raytheon RF Components

Abstract

13e

GaAs-Based Heterostructures on Silicon
Z. Yu, R. Droopad, D. Jordan, J. Curless, Y. Liang, C. Overgaard, H. Li, A. Talin, T. Eschrich, B. Craigo, K. Eisenbeiser, R. Emrick, J. Finder,
X. Hu, Y. Wei, J. Edwards, Jr., D. Convey, K. Moore, D. Marshall, J. Ramdani, L. Tisinger,
W. Ooms, M. O’Steen, F. Towner, T. Hierl, Motorola & IQE

Abstract

 


 

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