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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"

2003 On-line Digest Table of Contents
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1.1 The four key development vectors for next-generation handset design
David J. Aldrich, Skyworks Solutions Inc.
Abstract
1.2

A DARPA Perspective on the Future of Electronics
John C. Zolper, DARPA/MTO

Abstract

1.3

GaAs and SiGec BiCMOS Cost Comparison – Is SiGec Always Cheaper?
Mark Wilson, Motorola Semiconductor Products Sector

Abstract

2.1

Advance in Compound Semiconductor of China
Qi Huang and Junming Zhou, Institute of Physics, Chinese Academy of Sciences, Advanced Chinese Epitaxy Ltd.

Abstract

2.2

RF Power Amplifiers for Cellphones
C.E. Weitzel, Motorola, Inc., Semiconductor Products Sector

Abstract

2.3

Ultra Broadband MEMS Switch on Silicon and GaAs Substrates
Richard Chan, Robert Lesnick, David Caruth, and Milton Feng, High Speed Integrated Circuits Group, Department of Electrical and Computer Engineering, University of Illinois

Abstract

2.4

Root Cause Analysis and Reduction of Off-State Leakage Current to Increase Manufacturability of a HIGFET Device
J. Hughes, E. Huang, J. Apibunyopas, C. Della-Morrow, T. Nilsson, M. Coe, Motorola Semiconductor Products Sector

Abstract

3.1

Impact of Substrate Imperfections on Epitaxial Layer Quality
Michael Wojtowicz, Randy Sandhu, Ben Heying, and Thomas Block, Northrop Grumman Space Technology

Abstract

3.2

Use of Re-etched and Re-polished Epi-wafers for MBE Calibration Substrates
J. Lowmaster, R. Pelzel, M. Dydyk, D. Green, IQE, Inc.,

Abstract

3.3

Commercial Production of Large Diameter InP-HBT Epiwafers by MBE
D. I. Lubyshev, K. Teker, O. Malis, Y. Wu, J. M. Fastenau, X.-M. Fang, C. Doss, A. B. Cornfeld, and W. K. Liu, IQE Inc.,

Abstract

3.4

Volume Epitaxial Growth of Enhanced Mode HIGFETs using Minimal Material Characterization and Rapid Inline Processing to Minimize Risk
Michael Pelczynski, Mark Rittgers, Bob Duffin, Celicia Della-Morrow, Mikhail Mikhov*, Motorola Inc. Semiconductor Product Sector

Abstract

3.5

Active Carbon Control During VGF Growth of Semiinsulating GaAs
T. Bünger, J. Stenzenberger, F. Börner, U. Kretzer, S. Eichler, M. Jurisch, R. Bindemann, B. Weinert, S. Teichert, T. Flade, Freiberger Compound Materials GmbH

Abstract

4.1

MIM’s the Word – Capacitors for Fun and Profit
Martin J. Brophy, Alfredo Torrejon, Shawn Petersen, Kamal Avala, and Li Liu, TriQuint Semiconductor

Abstract

4.2

On the Development of High Density Nitrides for MMICs
Y. C. Chou, R. Lai, G. P. Li , H. Guan * , R. Grundbacher, P. Nam, H. K. Kim, Y. Ra ** , M. Barsky, M. Biedenbender, and A. Oki, Northrop Grumman Space Technology

Abstract

4.3

Development and Characterization of a 600 Å PecVD Si3N4 High-Density MIM Capacitor for InGaP/GaAs HBT Applications
Jiro Yota, Ravi Ramanathan, Jose Arreaga, Peter Dai, Cristian Cismaru, Richard Burton, Parminder Bal, Lance Rushing, Skyworks Solutions, Inc.

Abstract

4.4

Characteristics of Low-k Film Deposited by Plasma-Enhanced CVD Using a Liquid BCB Source
Suehiro Sugitani, Hideaki Matsuzaki, and Takatomo Enoki,  NTT Photonics Laboratories, NTT Corporation

Abstract

4.5

Metal particle effects on thin film capacitors in high volume manufacturing
Muralidhar R. Rao, Sheila T. O'Neil, Shiban Tiku, Skyworks Solutions Inc.,

Abstract

4.6

Backside Emission Microscopy Applications In Compound Semiconductor Manufacturing Debug
P. Sanders, H. Henry, D. Hill, M. Sadaka, S. Wilson, Motorola Semiconductor Products Sector

Abstract

5.1

Compact System-on-Package (SOP) Architectures for low cost RF Front-end modules
J. Laskar, S. Pinel, K. Lim, A. Raghavan, R. Li, C-H. Lee, M. Maeng, M.F. Davis, M. Tentzeris.,
School of ecE, Georgia Institute of Technology

Abstract

5.2

Integrated circuits using embedded III-V-on-Ge MHEMTs in multi-layer thin-film technology
R. Vandersmissen 1 , D. Schreurs 1 , S. Vandenberghe 1 , G. Carchon, and G. Borghs 2, IMec, MCP,

Abstract

5.3

Wafer-Level Assembly of Heterogeneous Technologies
J.-Q. Lu, A. Jindal, P.D. Persans, T.S. Cale, and R.J. Gutmann, Interconnect Focus Center: Interconnections for Gigascale Integration, Rensselaer Polytechnic Institute

Abstract

5.4

Dense, Two-Dimensional Optoelectronic Chips for High-Speed, Parallel Optical Links
Doug J. Burrows, Kelly A. Zabierek, Richard R. Dennis, Suzanne M. Wade, and Robert W. Cook, TeraConnect, Inc.,

Abstract

5.5

Power GaInP/GaAs HBTs for High Voltage Operation
P. Kurpas, A. Maaßdorf, W. Doser*, W. Köhler, P. Heymann, B. Janke, F. Schnieder, H. Blanck*, P. Auxemery**, D. Pons**, W. Heinrich, J. Würfl, Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH)

Abstract

6.1

Refractory Gate Metallization Characterization for HIGFET Power Amplifiers
James Cotronakis, Thomas Nilsson, Motorola Compound Semiconductor

Abstract

6.2

Fabrication and Characterization of Thin Film Resistors for GaAs-Based Power Amplifiers
Hong Shen, Jose Arreaga,
Ravi Ramanathan, Heather Knoedler, John Sawyer, and Shiban Tiku, Skyworks Solutions, Inc.,

Abstract

6.3

NiGeAu Ohmic Contact in InGaP pHEMTs
Ellen Lan, Qianghua Xie, Peter Fejes, and Ha Le, Motorola Inc., Semiconductor Products Sector

Abstract

6.4

Advances in Gold Metallization at Motorola's Compound Semiconductor Fab (CS1)
Chad M. Becker, William Rummel*, Dr. Paul Ocansey, Motorola Compound Semiconductor

Abstract

6.5

The Study of Dendrites Formation Mechanism to Enhance Gold Plating Process Yield, Throughput, and Solution Lifetime
S.J. Huang, H.C. Chou, T.C. Lee, B. Lin, D.W. Tu, P.C. Chao, and C.S. Wu, WIN Semiconductors Corporation

Abstract

7.1

High Voltage Microwave Devices: An Overview
D. Miller and M. Drinkwine, M/A-COM, Inc.

Abstract

7.2

III-V Compound Semiconductor Industry and Technology Development in Taiwan
Yung S. Liu,
Optoelectonics & Systems Laboratories, Industrial Technology Research Institute

Abstract

7.3

High Speed 0.18µm Ion-implanted GaAs MESFET Process with High Uniformity & Excellent Reproducibility
D. Fukushi, M. Watanabe and S. Nakajima, Optoelectronics R&D Laboratories, Sumitomo Electric Ind., Ltd.

Abstract

7.4

Deterministic Process Control Using a Multivariate Model
D. Miller, M/A-COM, Inc.

Abstract

7.5

Trade-off Relationship between Breakdown and Gate-Lag in Recessed-Gate GaAs FETs
Y. Mitani, D. Kasai and K. Horio, Faculty of Systems Engineering, Shibaura Institute of Technology

Abstract

8.1

Optimization of PHEMT for Microwave Power Applications
T. Baksht, S. Solodky, A. Khramtsov, * S. Hava * and Yoram Shapira, Faculty of Engineering,
Tel Aviv University,Ramat Aviv,69978,Israel; Engineering Faculty,Ben-Gurion University of the Negev, Mark Leibovich and Gregory Bunin Gal El (MMIC)

Abstract

8.2

The First 0.15um MHEMT 6”GaAs Foundry Service: Highly Reliable Process for 3 V Drain Bias Operations
M. Chertouk, W. D. Chang, C. G. Yuan, H. H. Chen, L. Lo, C. H. Chen, D. W. Tu, J. Liu, N. Draidia, P. C. Chao, WIN Semiconductors Corp.

Abstract

8.3

High Power Ka – Band PIN Diode Technology
B. Houli-Arbiv, G. Bunin, J. Kaplun, I. Hallakoun, T. Boterashvili, Y. Knafo, A. Cohen-Nov, M. Leibovitch, B. Revzin, Gal-El (MMIC)

Abstract

8.4

Predictive Modeling of InGaP/GaAs HBT Noise Parameters from DC and S-Parameter Data for Wireless Power Amplifier Design
James Chingwei Li 1 , Peter J. Zampardi 2 , and Van Pho 3,
Skyworks Solutions Inc.,

Abstract

8.5

Phase Formation in Gold-Tin Alloys Electroplated from a Non-cyanide Bath
Yahui Zhang and Douglas G. Ivey, Department of Chemical and Materials Engineering, University of Alberta

Abstract

8.6

Cycle Time Reduction During Electroplating of Through Wafer Vias For Backside Metallization of III-V Semiconductor Circuits
Dennis Anderson, Heather Knoedler, Shiban Tiku, Skyworks Solutions Inc.,

Abstract

8.7

Properties, process control, and characterization of PecVD silicon nitrides for compound semiconductor devices
Candi S. Cook,1,2 Terry Daly,1 Ran Liu,1 Michael Canonico,1 Martha Erickson,1 Qianghua Xie,1 Rich Gregory,1 and Stefan Zollner 1
1 Motorola, Inc.,  2 Arizona State University, Science and Engineering of Materials Program

Abstract

8.8

Characterization and Control of Galvanic Corrosion During GaAs Wafer Photoresist Processing
J. Moore, H. Hendriks*, and A. Morales*, General Chemical - Electronic Materials, *M/A-COM: Tyco

Abstract

8.9

Low Damage Dielectric Etching on GaAs Using a Helicon Wave High Density Source
F.S. Pool, W.A. Wohlmuth, E. Maxwell, B. Berggren, S. Roadman, S. Mahon, B. Howell and W. Mickanin, TriQuint Semiconductor

Abstract

8.10

Improved Plasma Etch Process Control of TiWN Gate Length
Jason Fender, Susan Chorrushi-Patino, Janet Hill-Tinkler, Compound Semiconductor-1 Motorola, Inc.

Abstract

8.11

Life Tests and TDDB Life Prediction Modeling of 50 nm Silicon Nitride Capacitors
Gergana I. Drandova, John M. Beall, Kenneth D. Decker, Keith A. Salzman, TriQuint Semiconductor

Abstract

8.12

Process Optimization for 0.5 µm Dual Recess PHEMT Power Amplifiers
Sabyasachi Nayak, Marcus King, Keith Salzman, John Beall, TriQuint Semiconductor Texas

Abstract

8.13

Comparison of InAlAs/InP Hetero-interface Properties -MBE vs. MOCVD-
Misao Takakusaki, Hajime Momoi, Kouji Kakuta and Hirofumi Nakata, Nikko Materials Co., Ltd.

Abstract

8.14

Development of High-Gain and High-Efficiency InGaP/GaAs HBT for High-Voltage Operation
Yuefei Yang, Kevin Feng, Byounguk In, Chanh Nguyen, Daniel Hou, Yaochung Chen and Dave Wang, Global Communication Semiconductors, Inc.

Abstract

8.15

Strength Improvement for the GaAs Thin Wafer
Hiep Pham, Chang-Hwang Hua, Skyworks Solutions, Inc.,

Abstract

8.16

Smooth, Anisotropic Etching of Indium Containing Multi-layer Structures Using a High Density ICP System
Yao-Sheng Lee, Mike DeVre, David Lishan, Brad Reelfs, Russ Westerman, Unaxis USA, Inc.

Abstract

8.17

Yield Enhancement Using Final Outgoing Automated Inspection System
Karen Lenaburg, Susan Valocchi, Jan Campbell, Motorola, Semiconductor Products Sector

Abstract

8.18

A comparison of BCB with Polyimide process in manufacturing HBT devices
June Nguyen, Oksun Dydasco, Harutoshi Saigusa, Chang-Hwang Hua, Skyworks Solutions, Inc.,

Abstract

8.19

Building Solder Bumps on GaAs Flip Chip Schottky Devices
Prasit Sricharoenchaikit, M/A-COM, Inc.,

Abstract

8.20

Stress and Other Challenges with Evaporated Ni-Cr Thin Film Resistors Used in the Manufacture of ASICs
Necmi Bilir and Long Do, Skyworks Solutions, Inc.,

Abstract

8.21

Optical Device Wafer Manufacturing in an IC Foundry
Sam Wang, Guojin Feng, Peter Lao, Sangmin Lee, Sujane Wang, and Chanh Nguyen, Global Communication Semiconductors, Inc.

Abstract

8.22

Improving process yield by utilizing smart SPC rules
Oded Tal, MAX International Engineering Group

Abstract

8.23

High Yield Lithography and Wafer Handling Methods for Reliable Backside Processing of Brittle III-V Materials
C. Schaefer 1 , V. Dragoi 1 , S. Farrens 2 , M. Wimplinger , P. Lindner 1, 1 EV Group E. Thallner GmbH, 2 EV Group Inc.,

Abstract

8.24

An InP/InGaAs SHBT Technology for High-Speed Monolithic Optical Receivers
Shyh-Chiang Shen, David C. Caruth, Doris Chan, Aunt Thu, Jeffrey Feng, and Milton Feng, Xindium Technologies, Inc.

Abstract

8.25

Advanced Commercial InP HBT IC Process
N. X. Nguyen, J. Fierro, K. T. Feng, and C. Nguyen,
Global Communication Semiconductors, Inc.

Abstract

8.26

Improved characterization of diffusion in ohmic contacts using Backside SIMS
Patrick Van Lierde, Chunsheng Tian, Charles Evans & Associates

Abstract

10.1

New Manufacturing Concepts for Ultra-Thin Silicon and Gallium Arsenide Substrates
K. Bock, M. Bleier, O. Köthe, C. Landesberger, Fraunhofer Institute for Reliability and Microintegration IZM-M, Munich branch of the institute,

Abstract

10.2

A Novel Backside Process to Achieve 1-mil Thick Wafers at 6-inch Foundry
H.C. Chou, T.C. Lee, S.J. Huang, H.H. Weng, M.H. Tsai, J.M. Lee, M. Chertouk, D.W. Tu, P.C. Chao, and C.S. Wu, WIN Semiconductors Corporation

Abstract

10.3

Impact of Backside Via Dimension Changes on High Frequency GaAs MMIC Circuit Performance
P. Nam, R. Tsai, D. Davison, B. Allen, M. Barsky, R. Grundbacher, R. Lai and S. Olson, Northrop Grumman Space Technology

Abstract

10.4

Dry Etching of Deep Backside Vias in InP
Maria Huffman 1, Timothy Engel 1, Nicholas Pfister 1, Gabriel Arevalo 1, Tom Brown 1, Maya Farhoud 1, Ron Miller 1, Ben Keppeler 1, John Staroba 1, Richard Jefferies 2 ., 1 Agilent Technologies Inc.,  2 Trikon Technologies Ltd.,

Abstract

10.5

Eliminating Pillars During GaAs Via Etch Formation
R. Westerman 1 , D. Johnson 1 , F. Clayton 2, Unaxis USA, Inc., Motorola Inc.,

Abstract

10.6

Optimization of Metal Adhesion for GaAs Backside Wafer Processing
Terry Daly, Jason Fender, Bob Duffin, Mike Kottke, Compound Semiconductor-1 Motorola, Inc.

Abstract

11.1

Activities of Indium Phosphide in Japan
Yasuyuk i Miyamoto, Department of Physical Electronics, Tokyo Institute of Technology

Abstract

11.2

The Emergence of SiGe:C HBT Technology for RF Applications
V. Ilderem, S.G. Thomas, J.P. John, S. Wipf, D. Zupac, H. Rueda, F. Chai, R. Reuter*, J. Kirchgessner, J.Teplik, P. Wennekers*, T. Baker, M. Clifford, J. Griffiths, M. Tawney, M. McCombs, Digital DNA TM Laboratories, Semiconductor Products Sector, *EMEA-Berlin, Motorola Inc,

Abstract

11.3

Investigation of stressing InP/InGaAs DHBTs under high current density
V.E. Houtsma, J. Frackoviak, R.F. Kopf, R.R. Reyes, W. Sung, A. Tate, Y. Yang, N.G. Weimann, and Y.K. Chen, Bell Labs, Lucent Technologies

Abstract
11.4

GaInP/GaInAsN/GaAs N-p-N Bipolar Transistors: Influence of Base Layer Composition and Alloy Grading on Device Performance
Bryan D. Dickerson, Bradley J. Heath, and Louis J. Guido,
Virginia Tech, Department of Material Science and Engineering,
Kevin S. Stevens, Charles R. Lutz, Eric M. Rehder, and Roger E. Welser,
Kopin Corporation,

Abstract
12.1

In-Line Defectivity Methodology for a GaAs Manufacturing Facility
Jan Campbell, Karen Lenaburg, Niki Liggins, Motorola, Semiconductor Product Sector

Abstract
12.2

High uniformity, highly reproducible non-selective wet gate recess etch process for InP HEMTs
Xin Cao, Iain Thayne, Ultrafast Systems Group, Department of Electronics and Electrical Engineering, University of Glasgow

Abstract
12.3

A High Performance and High Yield Self-Aligned and Double Recessed pHEMT Process with One Lithography Step for Both Gate and First Recess Definition
Kamal Tabatabaie-Alavi, Colin Whelan, and Elsa Tong, Raytheon RF Components Company

Abstract
12.4

Electrophoretic Photoresist Application for High Topography Wafer Surfaces
James Tajadod, Henry Hendriks, John Klocke*, Antonio Morales, and Heather Rapuano, M/A-COM: Tyco

Abstract
12.5

Advances in CPL, Collimated Plasma Source & Full Field Exposure for Sub-100nm Lithography
Brent Boerger, Scott Mcleod, Richard Forber, I.C.E. Turcu, Cel
Gaeta, Donald K. Bailey, Jacob Ben-Jacob, JMAR Systems

Abstract
13.1

Ti/Al/Ni/Au Ohmic Contacts on AlGaN/GaN HEMTs
A. Crespo, R. Fitch, J. Gillespie, N. Moser, G. Via, M. Yannuzzi, Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB

Abstract
13.2

AlGaN/GaN HEMTs on Silicon Carbide Substrates for Microwave Power Operation
Richard Lossy 1, Nidhi Chaturvedi 1 , Peter Heymann 1, Klaus Köhler 2, Stefan Müller 2 and Joachim Würfl , 1 Ferdinand-Braun-Institut für Höchstfrequenztechnik

Abstract
13.3

GaN-HEMT on 100mm Diameter Sapphire Substrate Grown by MOVPE
Yohei Otoki, *Michio Kihara, *Takeshi Tanaka, *Kazuto Takano, **Toshihide Kikkawa and ***Tsutomu Igarashi, Semiconductor Engineering Dept., Hitachi Cable, *Advanced Research Center, Hitachi Cable, **Fujitsu Laboratories Ltd, ***Fujitsu Quantum Devices Ltd.

Abstract
13.4

Transition of High Power SiC MESFETs from 2-inch to 3-inch Production for Improved Cost and Producibility
J.W. Milligan, S.T. Allen, J.J. Sumakeris, A.R. Powell, J.R. Jenny, and J.W. Palmour, Cree, Inc.,

Abstract
13.5

Solid-State Lighting: Lamp Targets and Implications for the Semiconductor Chip
Jeff Y. Tsao,
Sandia National Laboratories

Abstract


 

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