2004 Digests

 
 

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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"
2004 On-line Digest Table of Contents

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1.1

State of the Compound Semiconductor Industry 

Abstract
1.2

Integrated Microsystems: The Next Technology Transition

Abstract

1.3

High Bandwidth Devices: Faster Materials  versus Nanoscaled Si and SiGe

Abstract

2.1

Transition of SiC MESFET Technology from Discrete Transistors to High Performance MMIC Technology

Abstract

2.2

A “Snapshot” of AlGaN/GaN HEMT State-of-the-Technology

Abstract

2.3

High Performance GaN HEMTs on 3-inch SI-SiC Substrates

Abstract

2.4

GaN HFET digital circuit technology

Abstract

2.5

Diamond
A New Materials Base for Future Ultra High Power RF Electronics

Abstract

3.1

A Field Plate Device by Self-Aligned Spacer Process

Abstract

3.2

Sub 100nm T-Gate Uniformity in InP HEMT Technology

Abstract

3.3

Interlayer and Intershot Charging-Induced Pattern Distortion on GaAs Substrates Exposed with a High Throughput Shaped Beam Electron Beam Lithography System

Abstract

3.4

0.15mm In0.4GaAs/In0.4AlAs Metamorphic HEMT’s (M-HEMT’s) Using A Novel Triple Shaped Gate Stgructure Assisted By PMGI Resist

Abstract

3.5

Cost Effective T-Gate Process for PHEMT-based MMIC with Large Gate Periphery

Abstract

4.1

Commercial Applications for GaAs Millimeter Wave MMICs

Abstract

4.2

Development and Transition-to-Production of a High-volume Ka-Band
SATCOM Outdoor Unit (ODU) Transmit Module

Abstract

4.3

0.1mm InP HEMT MMIC Fabrication on 100 mm Wafers for Low Cost, High Performance Millimeter-Wave Applications

Abstract

4.4

Manufacturable A1Sb/InAs HEMT Technology for Ultra-Low Power Millimeter-Wave Integrated Circuits

Abstract

5.1

Transfer of GaAs pHEMT Technologies from Infineon to TriQuint

Abstract

5.2

Manufacturing Excellence, Still Achievable in the US

Abstract

5.3

The Implementation of Autonomous Maintenance

Abstract

5.4

Manufacturing Excellence in a Compound Semiconductor Fabrication Facility

Abstract

5.5

A DOE Approach to Product Qualification For Linear Handset Power Amplifiers

Abstract

6.1

An Over 100 W CW Output Power Amplifier Using AlGaN/GaN HEMTs

Abstract

6.2

Manufacturable GaN HEMP RF Power Technology for Wireless Infrastructure Applications

Abstract

6.3

Low Noise – High Power GaN HEMT Technology for Mixed Mode Applications

Abstract

6.4

Development of a GaN Transistor Process for Linear Power Applications

Abstract

6.5

Balanced AlGaN/GaN-HFET amplifier based on 111-Silicon substrate

Abstract

7.1

A 0.5-mm InGaP Etch Stop Power pHEMT Process Utilizing Multi-Level High Density Interconnects

Abstract

7.2

Multiple Level Plated gold Intgerconnect for III-V Circuits

Abstract

7.3

Copper Airbridged Low Noise GaAs PHEMT with WNx as the Diffusion Barrier

Abstract

7.4

GaAs Surface Preparation for Thin Film Deposition Using Sodium Hypochlorite

Abstract

7.5

GaAs Corrosion Under Ohmic Contacts by Electrochemical Oxidation in HBT Device Fabrication

Abstract

8.1

Characterization and Mapping of Crystal Defect in Silicon Carbine

Abstract

8.2

Interferometric Metrology for Thin and Ultra-thin Compound Semiconductor Structures Mounted on Insulating Carriers

Abstract

8.3

Optical Characterization of Radio-Frequency Magnetron-Sputtered Gallium-Arsenide Films under Non-Uniform Thickness Conditions

Abstract

8.4

Contactless Electrical Characterization of HEMP Epitaxial Structures and Devices

Abstract

8.5

Gate Electrode Formation Process Optimization in a GaAs FET Device

Abstract

8.6

Device Zoo:  A Smart tool for Device Performance Optimization

Abstract

8.7

A Novel Scheme for the Deposition and Spectroscopic Ellipsometry Characterization of PecVD, Silicon-based, Dielectric Layers for Optoelectronics Applications

Abstract

8.8

GaAs HBT wet etch processing using reclaimed chemicals

Abstract

8.9

A Reproducible, High Yield, Robust Wet Etch Etch-Stop Process Using Organic Acid – Peroxide Solutions

Abstract

8.10

High Temperature Resistant Adhesive for Wafer Thinning and Backside Processing

Abstract

8.11

Low-k Underfill Using Spray Coat Technology

Abstract

8.12

Through-wafer Via Etch Throughput Improvement in a GaAs Semiconductor Device

Abstract

8.13

1/f Noise Characteristics and High-Frequency Noise Performance of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs PHEMTs

Abstract

8.14

Noise and Large-Signal Characterization of a Thin-film MHEMT Feedback Amplifier in Multilayer MCM-D Technology

Abstract

8.15

A System for High Current Density Reliability Testing of HBT’s with in-situ Measurement

Abstract

8.16

InAlAs/GaAsSb/InP DHBTs grown by Production MBE

Abstract

8.17

ecR Based Chemically Assisted Plasma Etching of GaAs

Abstract

8.18

Study of Reactive Ion Etching Process to Fabricate Reliable Via-Hole ground Connections in GaAs MMICs

Abstract

8.19

Application of Electrical CD Measurement Methodology for InGaP/GaAs HBT Production

Abstract

10A.1

Thermal Management of High Power Devices

Abstract

10A.2

Trends in RF & Wireless Packaging

Abstract

10A.3

RF SiP Technology: Integration and Innovation

Abstract

10A.4

Evaluation of High Temperature Overmold Compounds for Manufacturing of Laminate Based Leadfree System in Package

Abstract

10A.5

Plasma Etching of Thick BCB Polymer Films for Flip Chip Bonding of Hybrid Compound Semiconductor-Silicon Devices

Abstract

10B.1

Very Large Scale Electro-optical Device Process and Yield Challenges

Abstract

10B.2

Development of RM3 Technololgy to Integrate P-i-N Photodiodes on Si-CMOS for Optical Clock Distribution

Abstract

10B.3

Improvement of Wafer Bonding Processing HB-LED with Low-Temperature-Grown Compound Semiconductors as Adhesive Materials

Abstract

10B.4

Toward the Development of Hybrid MEMS Tunable Optical Filters and Lasers

Abstract

10B.5

MMIC Compatible High Performance Lateral Deflection RF MEMS Switches

Abstract

10B.6

Characterization of Loading in the Plasma Etching of HgCdTe and Related II-VI Materials for Infrared Focal Plane Array Fabrication

Abstract

11A.1

X-ray of High Order Planes, Pathway for HBT Control

Abstract

11A.2

Junction Temperature and Thermal Resistance of Ultrafast Sub-micron InP/InGaAs SHBTs

Abstract

11A.3

Application of IVS Overlay Measurement to Wafer Deformation Characterization Study

Abstract
11A.4

Investigatons on Initial Beta Drift During Reliability Test for MOCVD Grown C-doped InGaP/GaAs HBTs

Abstract
11A.5

Walkout in PHEMTs: Origin and Relation to Device Structure

Abstract
11B.1

Wide Bandgap Semiconductor Substrates: Current Status and Future Trends

Abstract
11B.2

Sub-Surface Damage Removal in Fabrication & Polishing of Silicon Carbide

Abstract
11B.3

Improvement of Substrate Related Uniformity of AlGaN/GaN HEMP Epi Wafers on f3” Sapphire and SiC Substrates Grown by Multi-charged Large MOVPE Reactor

Abstract
11B.4

Reproducible and Highly Uniform Growth of GaN by MOCVD and MBE

Abstract
11B.5

Migration Enhanced Metalorganic Chemical Vapor Despsition of AlN/GaN/InN based heterostructures

Abstract
12.1

Uniform InP/InGaAs SHBT Fabrication Using ICP emitter Etching on 4-inch Wafers

Abstract
12.2

Low Temperature High Density Highly Uniform SicN4 Technology for Passive and Active Devices in MMMIC Applications

Abstract
12.3

Continuous Defectivity Improvements and Impact on High Density Metal-Insulator-Metal

Abstract
12.4

Characterization & Optimization of Low Stress PecVD Silicon Nitride for Production GaAs Manufacturing

Abstract
12.5

Oxygen Plasma Photoresist Strip in High Valume HBT Production

Abstract
12.6

Novel Via Planarization Scheme for High Resolution Backside Wafer Processing

Abstract
13.1

Advanced InP Heterojunction Bipolar Transistors with Implanted Subcollector

Abstract
13.2

Narrow-Band-Gap-HBT Technology for Low-Power, High-Speed Applications

Abstract
13.3

Low Turn-on voltage InGaP/GaAsSb/GaAs DHBT Grown by MOCVD

Abstract
13.4

Observations of Current Blocking in InP/GaAsSb DHBTs

Abstract
13.5

Recombination Investigation of InGaP HBT’s

Abstract
13.6

Cbc Reduction in Si-implanted Subcollector HBTs

Abstract


 

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