2006 Digests

 
 

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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"
2006 On-line Digest Table of Contents

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1.A
Compound Semiconductors Benchmark Study
Oded Tal, Ariel Meyuhas, MAX International Engineering Group
Abstract
1.B

Future Trends for Microwave Compound Semiconductors in Military Systems
John Zingaro, Northrop Grumman ES

Abstract

1.C

China’s Compound Semiconductor Industry: The Impact on Global Manufacturing
Robert Walker, eLite Optoelectroics, Inc., YEBY Associates, LLC

Abstract

2.A

Semiconductor Innovation and Integration for Next-Generation 3G Multimedia Devices
Brian Daly, Skyworks Solutions, Inc

Abstract
2.B

Release for Production of a 150 GHz, 125nm Gate 40% In Metamorphic GaAs  HEMT MMIC Process
J. Bellaïche, P. Baudet, S. Demichel, M. Renvoisé, H. Maher, J. F. Pautrat, M. G Périchaud, S. Lafont, OMMIC

Abstract
2.C

The First 0.1mm 6” GaAs PHEMT MMIC Process
L. Gunter, D. Dugas, S. Yang, P. Seekell, M. Gerlach, J. Diaz, J. Lombardi, W. Hu, P.C. Chao, K. Nichols, W. Kong, B. Golja and K.H.G. Duh, BAE Systems

Abstract

2.D

The Manufacture of Optical Components on 4-inch InP in a GaAs Production Fab
C. Youtsey, E. Beam, T. Chou, J. Jimenez, A. Ketterson, A. MacInnes, A. Mahajan, P. Saunier, D. Wohlert, TriQuint Semiconductor

Abstract

2.E

The Effective Use of Process Control Plans and Process Failure Mode Effects Analys in a GaAs Semiconductor Manufacturing Environment
Daniel J. Le Saux, Skyworks Solutions, Inc.

Abstract

3.A

Wide-Bandgap Semiconductor Devices for Automobile Applications
H. Ueda1, M. Sugimoto2, T. Uesugi1, and T. Kachi1, 1Toyota Central R&D Lab, Inc., 2Toyota Motor Corp.

Abstract

3.B

Preliminary Results from Phase II of the Wide Bandgap Semiconductor for RF  Applications (WBGS-RF) Program
Mark Rosker
1,  Harry Dietrich2, Chris Bozada4, Alfred Hung3, and Glen David Via4, 1Defense Advanced Research Projects Agency / Microsystems Technology Office , 2Office of Naval Research, 3Army Research Laboratory, 4Air Force Research Laboratory
 

Abstract

3.C

Development of AlGaN/GaN High Power and High Frequency HFETs under NEDO's Japanese National Project
Yasushi Nanishi
1, H. Miyamoto2, A. Suzuki1, H. Okumura3, and N. Shibata2, 1Ritsumeikan University, 2R&D Association for Future Electron Devices, 3National Institute of Advanced Industrial Science and Technology
 

Abstract

3.D KORRIGAN: Development of GaN HEMT Technology in Europe
G. Gauthier
1, Francois Reptin2, 1Thales Airborne Systems, 2DGA/DET/PCO
 
Abstract
4.A The SEMI International Standards Program – History, Successes and Lessons Learned to Address Compound Semiconductor Manufacturing Challenges
Bettina Weiss, SEMI
Abstract
4.B White Light Interferometry – A Production Worthy Technique for Measuring Surface Roughness on Semiconductor Wafers
 Roy T. Blunt, IQE (Europe) Ltd.
Abstract

4.C

Overcoming Difficulties in Photoreflectance Measurements on Product HBTS
E.M. Rehder, P. Rice, K.S. Stevens. C. R. Lutz,
Kopin Corp.

Abstract

4.D

An Overview of Gallium Nitride Substrate Materials Developments for Optoelectronic and Microelectronic Applications
A. D. Hanser1, L. Liu1, E. A. Preble1, D. Tsvetkov1, M. Tutor1, N. M. Williams1, K. Evans1, Y. Zhou2, D. Wang2, C. Ahyi2, C.-C. Tin2, J. Williams2, M. Park2, D. F. Storm3, D. S. Katzer3, S. C. Binari3, 1Kyma Technologies, Inc., 2Auburn University, 3Naval Research Laboratory

Abstract

4.E

Recent Achievement of the SopSiC Substrates for High Power and High Frequency Applications
R. Langer1, B. Faure2, A. Boussagol2, P. Bove1, H. Lahreche1, A. Wilk1, J. Thuret1, F. Letertre2, 1Picogiga International, 2Soitec

Abstract

5.A

Perfect Quality for Free?!
Nien-Tsu Shen, Skyworks Solutions, Inc.

Abstract

5.B

Statistical Quality Control of Wafer Level DC Die Sort Test

 Y. Z. Wang, R. S. Persaud, R. C. Salvador and D. J. Troy,  Anadigics, Inc

Abstract

5.C

SiN Capacitors and ESD
Gergana I. Drandova, John M. Beall, Kenneth D. Decker, TriQuint Semiconductor

Abstract

5.D

The Reliability Study of MIM Capacitor Built On Top of Backside Via In III-V Compound MMIC
X. Zeng, M. Barsky, J. Uyeda, D. Farkas, F. Yamada, M. Biendenbender, D. Eng, J. Wang, R. Lai, Northrop Grumman ST

Abstract

5.E

Lifetime of SiN Capacitors Determined from Ramped Voltage and Constant Voltage Testing
H. C. Cramer, J. D. Oliver, R. J. Porter, Northrop Grumman ES

Abstract

6.A

3.3fF/mm2 40V BST MIM Capacitor Suitable for Above MMIC Integration
Satoshi Horiuchi, Katsuji Matsumoto, Mariko Sakachi, Tsuyoshi Ooki, Hideko Nakamura, Kiwamu Adachi, Mamoru Shinohara, Sony Corp.

Abstract

6.B

High Value Thin Film Resistor for GaAs IC Manufacturing
Fabian Radulescu1, Jinhong Yang1, Paul Miller1, Ron Herring1, Chi-Fung Lo2, Wolfgang Liebl3, 1TriQuint Semiconductor, 2Praxair Surface Technology-MRC, 3Infineon Technologies AG

Abstract

6.C

Comparison of Different GaN Etching Techniques
Lei Ma, K. Fareen Adeni, Chang Zeng, Yawei Jin, Krishnanshu Dandu, Yoganand Saripalli, Mark Johnson, Doug Barlage, North Carolina State University

Abstract

6.D

Bias Annealing Behavior of Plasma-Induced Defects in n-GaN Exposed to Plasma
S. Nakamura, M. Suda, M. Suhara, and T. Okumura,
Tokyo Metropolitan University

Abstract

7.A

Status and Progress in InP Optoelectronic Processing: Towards Higher Levels of  Integration
Jacco L. Pleumeekers, Richard P. Schneider, Jr., Atul Mathur, Sheila K. Hurtt, Peter W. Evans, Andrew G. Dentai, Charles H. Joyner, Damien J. H. Lambert, Sanjeev Murthy, Ranjani Muthiah, Johan Baeck, Mark J. Missey, Randal A. Salvatore, Mehrdad Ziari, Masaki Kato, Radhakrishnan Nagarajan, Fred A. Kish, Infinera Corp.

Abstract

7.B

Compound Semiconductor MOSFET With High-k Dielectric
Karthik Rajagopalan, Ravi Droopad, Jon Abrokwah, and Matthias Passlack,
Freescale Semiconductor

Abstract

7.C

A Flip-chip Low Band Harmonic Filter Based on GaAs Integrated Passives
Jon Abrokwah, Sergio Pacheco, Shun-Meen Kuo, Li Li, Robert Bettiga, Philip Bowles, Gilles Montoriol, Freescale Semiconductor

Abstract

7.D

27 GHz Flip-Chip Assembled pHEMT Oscillator
Yue-ming Hsin1, Yu-An Liu1, Che-ming Wang1, Wei-kuo Huang1, Tsung-Jung Yeh2, 1Taiwan National Central University, 2WIN Semiconductor

Abstract

8.A

Reduction of Chlorinated Solvents in GaAs Manufacturing
Victoria Williams, Harold Isom, Thomas Nagle, Cary
 Sellers, Sean Hillyard, Samuel Roadman, Sumir Varma, TriQuint Semiconductor

Abstract

8.B

Reduction of Platinum Metal Usage in GaAs IC Metallization
L. Luu-Henderson, L. Rushing, and S. Tiku
, Skyworks Solutions, Inc.

Abstract

8.C

Significant Step in Wafer Yield Optimization and Operation Cost Reduction Due to Dicing Innovation
Mark Müller, Rene Hendriks, H. P. Chall, Advanced Laser Separation International

Abstract

8.D

Damage-Free Dicing of SiC Wafers by Wafer-Jet-Guided Laser
Sean Green, Delphine Perrottet, Bernold Richerzhage
n, Synova-SA

Abstract

9.A

A High Yield Manufacturable BiFET Epitaxial Profile and Process for High Volume Production
Mike Sun1, Pete Zampardi1, R. Ramanathan1, A.G. Metzger1, C. Cismaru1, Vincent Ho1, L Rushing1, K S. Stevens2, M. Chaplin2, R. E. Welser2 1Skyworks Solutions, Inc.,  2Kopin Corp.

Abstract

9.B

InGaP-Plus™: A Low Cost Manufacturable GaAs BiFET Process Technology
Mohsen Shokrani, Kezhou Xie, Boris Gedzberg, Wojciech Krystek, Prabhu Mushini, Aditya Gupta, Pat Fowler, William Peatman, Anadigics, Inc.

Abstract

9.C

High Performance Metamorphic InP/GaAsSb/InP "Type-II" DHBTs Grown on GaAs Substrates
Y. Zeng1, H. G. Liu1, N. G. Tao1, C. R. Bolognesi1, W. Tang2, W. Zhou2, K. M. Lau2, 1Simon Fraser University, 2Hong-Kong University of Science and Technology

Abstract

9.D

Investigation of Base-Collector Parasitics for Various Emitter and Base Geometries in GaAsSb/InP Type-II DHBTs
Benjamin F. Chu-Kung1, Shyh-Chiang Shen2, William Snodgrass1, and Milton Feng1, 1University of Illinois Department of ECE, 2Georgia Institute of Technology

Abstract

12.A

Recent Progress of Highly Reliable GaN-HEMT for Mass  Production
Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, Kazukiyo Joshin, Fujitsu Laboratories Ltd.

Abstract
12.B

High-Efficiency Amplifiers Using AlGaN/GaN HEMTs on SiC
Scott Sheppard, Bill Pribble, R. Peter Smith, Adam Saxler, Scott Allen, Jim Milligan, and Ray Pengelly, Cree Inc.

Abstract
12.C

Combined Infrared and Raman Temperature Measurements on Device Structures
A. Sarua1, Hangfeng Ji1, M. Kuball1, M.J. Uren2, T. Martin2, K. P. Hilton2, R. S. Balmer2, 1University of Bristol, 2QinetiQ,  Ltd

Abstract
12.D

Mass-Production of High-Voltage GaAs and GaN Devices
Eizo Mitani, Hitoshi Haematsu, Shigeru Yokogawa, Junichiro Nikaido, and Yasunori Tateno, Eudyna Devices Inc.

Abstract
12.E

An Ion-Implanted GaAs MESFET Process for 28V S-Band MMIC Applications
M. J. Drinkwine, T. Winslow, D. Miller, D. Conway, B. Raymond,  M/A-COM,  Inc.

Abstract
13.A

Reversible Wafer Bonding; Challenges in Ramping up 150mm GaAs Wafer Production to Meet Growing Demand
Suzanne Combe, John Cullen, Matthew O’Keefe, Filtronics ICS

Abstract
13.B

Defect Reduction in Through Wafer Via Photolithography Processing
J. Riege, T. Nguyen, H. Knoedler, B. Darley, R. Clark, N. Ebrahimi, S. Mony, S. Tiku, Skyworks Solutions, Inc.

Abstract

13.C Improvements in the Process for Electrodeposition of Au-Sn Alloys
Nasim Morawej1, Douglas G. Ivey1, and Siamak Akhlaghi2, 1University of Alberta, 2Micralyne Inc.
Abstract
13.D

Substrate Via Etch Profile Optimization Using RIE and Wet Etch Processes
S. E. Roadman, C. Youtsey, C. Sellers, and H. S. Isom, TriQuint Semiconductor

Abstract
13.E

Development of Backside Process for Use with Solder Paste Die Attach
Jason Fender and Terry Daly, Freescale Semiconductor

Abstract
14.A

Status of SiC Power Devices and Manufacturing Issues
Anant Agarwal and Sei-Hyung Ryu, Cree Inc.

Abstract
14.B

High-Yield Silicon Carbide Vertical Junction Field Effect Transistor Manufacturing for RF and Power Applications
Victor Veliadis, Li-Shu Chen, Megan McCoy, Ty McNutt, Eric Stewart, Robert Sadler, Alfred Morse, Steve Van Campen, Chris Clarke, Gregory DeSalvo, Northrop Grumman ES

Abstract
14.C

Technology Development of 4H-SiC RF BJTs with 5GHz fmax
Bart Van Zeghbroeck1,2, Ivan Perez
2, Feng Zhao1,2 and John Torvik2, 1University of Colorado, 2Advanced Power Technology

Abstract
14.D

AlGaN/GaN MIS HEMT with AlN Dielectric
Chen Tangsheng, Jiao Gang, Li Zhonghui, Li Fuxiao, Shao Kai, Yang Naibin, Nanjing Electronic Devices Institute

Abstract
14.E

SiC, Sapphire, and GaN Materials Status into Opto and RF Businesses
Philippe Roussel, Yole Developpement

Abstract
15.A

Low Power High-Speed Circuits with InAs-based HBT Technology
C. Monier, A. Cavus, R. S. Sandhu, A. Oshiro, D. Li, E. Kaneshiro, D. Matheson, B. Chan, and A. Gutierrez-Aitken, Northrop Grumman ST

Abstract
15.B

An Ultra-Low Power InAs/AlSb HEMT X-Band Low-Noise Amplifier and RF Switch
Jonathan B. Hacker1, Joshua Bergman1, Gabor Nagy1, Gerard Sullivan1, C. Kadow2, H.-K. Lin2, A. C. Gossard2, Mark Rodwell2, B. Brar1, 1Rockwell Scientific, 2UC Santa Barbara

Abstract
15.C

MOCVD Grown Metamorphic InAlAs/InGaAs HEMTs on GaAs Substrates
Chak-wah Tang, Jiang Li, Kei May Lau, Kevin J. Chen, Hong Kong University of Science and Technology

Abstract
15.D

Temperature Dependence of InGaP/InGaAs/GaAs pHEMTs
Man Ni1, P. Fay1, N. Pan2, 1University  of Notre Dame, 2MicroLink Devices

Abstract
15.E

Beyond CMOS: Logic Suitability of In0.7Ga0.3As HEMT
Dae-Hyun Kim and Jesús A. del Alamo, Massachusetts Institute of Technology (MIT)

Abstract
16.A

Visual and Electric Ohmic Metal Degradation from Later Process Steps
Thorsten Saeger, Tertius Rivers, Dorothy Hamada, Fabian Radulescu, Corey Jordan, Martin J. Brophy, TriQuint Semiconductor

Abstract
16.B

InP/InGaAs DHBT Large Signal Model for Nonlinearity Harmonic Predictions in ICs
Yu-Ju Chuang1, J. W. Lai1, Kurt Cimino1, Milton Feng1, Minh Le2, Raymond Milano2, R.. B. Elder3, Frank Strolli3, 1Dept of ECE Univ of Illinois, 2Vitesse Semiconductor, 3BAE Systems

Abstract
16.C

SEMI Standardization Efforts in Compound Semiconductors
James D. Oliver1 and Russ Kremer2, 1Northrop Grumman ES, 2Freiberger USA

Abstract
16.D

A Chemical and Thermal Resistant Wafer Bonding Adhesive Simplifying Wafer Backside Processing
A. Smith1, J. Moore2, and B. Hosse3, Brewer Science, Inc., 2DAETEC, LLC, 3RF Micro Devices

Abstract
16.F

Defect Formation in GaN Introduced During Plasma Processing
S. Nakamura, M. Suda, M. Suhara, and T. Okumura, Tokyo Metropolitan University

Abstract
16.G

Determining Inductor Interactions with a Design of Experiment
M. Meeder, M. Fresina, D. Limanto, M. Tenberge, W. Wohlmuth, Y. Tretiakov, and K. Sheek, RF Micro Devices

Abstract
16.H

Manufacture of Mesa-Type and Air-Bridge Gate In0.5Al0.5As/In0.5Ga0.5As Metamorphic High Electron Mobility Transistors (MHEMTs) with InxAl1-xAs Graded Buffer Layers
M. K. Hsu1, H. R. Chen2, W. T. Chen1, G. H. Chen1, C. C. Su2, and W. S. Lour1, 1National Taiwan Ocean University, 2National University of Kaohsiung

Abstract
16.I

Optimizing InGaP/GaAs HBT Technology for Distributed Amplifier Applications
Aroonchat Chatchaikarn1, Wing Yau2, Yuefei Yang2,  and G. P. Li1, 1UC Irvine, 2GCS, Inc.

Abstract
16.J

Highly Reliable GaAs Planar Airbridged Schottky Diodes for Flight Qualified Millimeter-wave Circuits
Hooman Kazemi, Lan Tran, Don Deakin, Jon B. Hacker, Chanh Nguyen, Rockwell Scientific

Abstract
16.K

Ensuring High Yield and Good Reliability for Mass-Produced High-Performance HallEffect Sensors
V. Mosser1, A. Kerlain1, Y. Haddab1, R. Morton2, Martin J. Brophy2, 1Itron, Inc., 2TriQuint Semiconductor

Abstract


 

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