2007 Digests

 
 

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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"
2007 On-line Digest Table of Contents

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01a State of the Compound Semiconductor Industry A Focus on Communications
Ralph Quinsey CEO TriQuint Semiconductor
Abstract
01b

GaAs Industry in Europe – Technologies, Trends and New Developments
Wolfgang Bösch CTO Filtronic IP, Shipley UK,

Abstract

01c

Overview of EMCORE’s Multi-junction Solar Cell Technology and High Volume Manufacturing Capabilities
David Danzilio EMCORE Photovoltaics

Abstract
01d

Bulk Acoustic Wave Devices – Why, How, and Where They are Going
Steven Mahon and Robert Aigner,TriQuint Semiconductor

Abstract
02a

Process Considerations for Manufacturing 50 μm Thinned III-V Wafers
G. Cobb, H. Isom, C. Sellers , V. Williams TriQuint Semiconductor

Abstract
02b FFT (Flow Free Thin) Mold Study for 44um Fine Pitch Device Application
J.M. Liu, Y.S. Lu, X.S. Pang Wireless Packaging System Laboratory, Technology Solutions Organization, Freescale Semiconductor (China) Ltd.
Abstract

02c

High Temperature–Resistant Spin-On Adhesive for Temporary Wafer Mounting Using an Automated High-Throughput Tooling Solution
A. Smith, R. Puligadda, W. Hong,T. Matthias, C. Brubaker, M. Wimplinger, and S. Pargfrieder
Brewer Science, Inc., EV Group Inc.,

Abstract

02d

Carrier techniques for thin wafer processing
C. Landesberger, S. Scherbaum, K. Bock Fraunhofer Institute for Reliability and Microintegration IZM

Abstract

03a

Mechanisms of Premature HEMT Breakdown
L. Gunter, W. Zhu, J. Hulse, J. Diaz, P. Seekell, W. Kong, K. Nichols, P.C. Chao BAE Systems

Abstract

03b

THE ROLE OF SUBSTRATE DISLOCATIONS IN CAUSING INFANT FAILURES IN HIGH COMPLEXITY InGaP/GaAs HBT ICs
T. S. Low, K. W. Alt, R. E. Yeats, C. P. Hutchinson, D. K. Kuhn, M. Iwamoto, M. E. Adamski, R. L. Shimon, T. E. Shirley, M. Bonse, F. G. Kellert, and D. C. D’Avanzo
A. Wibowo, S. Hassler, N. Pan, G. Hillier, and Hani Badawi, Morris Young, Weiguo Liu  Agilent Technologies, Inc.
MicroLink Devices, Inc. www.mldevices.com
AXT, Inc. www.axt.com ,

Abstract
03c On Wafer Reliability Test Bench for PHEMT and HBT Technologies
F. Bourgeois, M. Lanz, G.Jonsson, H. Stieglauer and D. Behammer, United Monolithic Semiconductors
Abstract
03d

Study on effect of fabrication process on TDDB lifetime of MIM capacitor
Eudyna Devices Inc., T.Kagiyama, Tosaka, R. Yamabi, and H. Yano

Abstract
03e

Reliability of High-Speed Devices: Probing of Self-Heating with Nanosecond Time-Resolution
M. Kuball, G.J. Riedel, J.W. Pomeroy, R. Simms, A. Sarua, M.J. Uren, T. Martin, K.P. Hilton, J.O. Maclean, and D.J. Wallis, H.H. Wills Physics Laboratory, University of Bristol, QinetiQ Ltd

Abstract
04a

High-Efficiency and Low-Noise AlGaN/GaN HEMTs for K-and Ka-Band Applications
Ming-Yih Kao, Cathy Lee, Paul Saunier, Hua-Quen Tserng and Gary Christison, TriQuint Semiconductor

Abstract

04b

A Temperature Dependent Scalable Large Signal InP/InGaAs DHBT Model
Mark Stuenkel, Yu-Ju Chuang, Kurt Cimino and Milton Feng, Department of Electrical and Computer Engineering, University of Illinois

Abstract
04c HfO2-based Metal-Oxide-Semiconductor Capacitors on n-InGaAs Substrate with a Thin Germanium Passivation Layer
Hyoung-Sub Kim, I.Ok, M. Zhang, F. Zhu, S. Park, J. Yum, S. Koveshnikov, W. Tsai, V. Tokranov, M.Yakimov, S. Oktyabrsky, and Jack C. Lee.  Intel Corporation, The University at albany-SUNY, The University of Texas Austin
Abstract
04d

Realization of InAlN/GaN Unstrained HEMTs on SiC Substrates with a 75 Å Barrier Layer
J. K. Gillespie, G. H. Jessen, G. D. Via, A. Crespo, and D. Langley Sensors Directorate, Air Force Research Laboratory Wright-Patterson Air Force Base, M. E. Aumer, H. G. Henry, D. B. Thomson, and D. P. Partlow Northrop Grumman Electronic Systems

Abstract

04e

High Frequency Noise Characterization and Modeling of InGaP/GaAs SHBTs
Benjamin F. Chu-Kung, Kurt Cimino, Yu-Ju Chuang, Mark Stuenkel, and Milton Feng Department of Electrical and Computer Engineering · University of Illinois Micro and Nanotechnology Laboratory,A. Wibowo, G. Hillier, and N. Pan Microlink Devices

Abstract

05a

Qualification and Reliability of a GaN Process Platform
S. Singhal, A.W. Hanson, A. Chaudhari, P. Rajagopal, T. Li, J.W. Johnson, W. Nagy, R. Therrien, C. Park, A.P. Edwards, E.L. Piner, K.J. Linthicum, I.C. Kizilyalli Nitronex Corporation
Abstract

05b

Reliability Study of AlGaN/GaN HEMTs Device
K. Matsushita, S. Teramoto, H. Sakurai, Y. Takada, J. Shim, H. Kawasaki, K. Tsuda and K. Takagi, Microwave Solid-state Department Toshiba Corp., Advanced Electron Devices Laboratory, Research and Development Center, Toshiba Corp

Abstract

05c

Trap Analysis of GaN-Insulated-gatge-HEMT for High Reliability
Toshihide Kikkawa, Masahito Kanamura, toshihiroOhki, Kenji Imanishi,Kozo Makiyama, Naoya Okamoto, Naoki Hara and Kazukiyo Joshin, Fujitsu Limited and Fujitsu Laboratories Ltd.
Abstract

05d

Leakage Current Screening for AlGaN/GaN HEMT Mass-Procuction
F. Yamaki, K. Ishii, M.Nishi, H. Haematsu, Y. tateno and H. Kawata, Eduyna Devices Inc
Abstract

05e

Failure Mechanisms in GaN HFETs under Accelerated RF Stress
A.M. Conway, M. Chen, P. Hashimoto, P.J. Willadsen, and M. Micovic, HRL Laboratories, LLC

Abstract

06a

Improvement of Base Ideality through Improved Surface Cleans
Terry Daly, Jason Fender, Agni Mitra, Matt Parker, Darrell Hill, and Adolfo Reyes, Freescale Semiconductor, Inc.

Abstract

06b

Surface Preparation Study in GaAs HBT Process
Y. Recsei, C. Luo, S. Tiku, P. Zampardi, Skyworks Solutions,

Abstract

06c

Atomic Hydrogen Cleaning of Epiready InSb (100), (111)B, and GCIB Processed InSb (111)B Surfaces
S. R. Vangala, H. Dauplaise, C. Santeufemio, C. Lynch, P. Alcorn, L.P. Allen, G. Dallas, K. Vaccaro, D. Bliss, and W. D. Goodhue, University of Massachusetts, Air Force Research Laboratories, Hanscom/SNHC AFB, Galaxy Compound Semiconductors, Inc.,

Abstract

06d

High-density Plasma Etching of RF-Sputtered Indium-Zinc-Oxide Films in Ar, Ar/Cl2, and Ar/CH4/H2 Chemistries
R. Khanna(1)*, W.T. Lim, L. Stafford, S.J. Pearton, Jae-Soung Park, Ju-Il Song, Young-Woo Heo, Joon-Hyung Lee, and Jeong-Joo Kim, Department of Materials Science and Engineering, University of Florida, Kyungpook National University

Abstract

07a

Vertical-HVPE as a Production Method for Free-Standing GaN-Substrates
B. Schineller, J. Kaeppeler, M. Heuken , AIXTRON AG,

Abstract

07b

Large Area Single Crystal Diamond Wafers; Applications, Status, and Future Perspectives
P. Doering, A. Genis, and R. Linare
s
Apollo Diamond, Inc.,

Abstract

07c

GaN on SOD Substrates – The Next Step in Thermal Control
J. Zimmer and G. Chandler sp3 Diamond Technologies Inc.,

Abstract

07d

GaN-HEMT Epilayers on Diamond Substrates: Recent Progress
D. Francis¹, J. Wasserbauer¹, F. Faili¹, D. Babić¹, F. Ejeckam¹, W. Hong², P. Specht², E. Weber² ¹Group4 Labs, LLC, 1600 Adams Dr., Menlo Park, CA 95025; daniel_francis@group4labs.com, (650) 688 5760 ²Department of Materials Science and Engineering, University of California, Berkeley

Abstract

07e

AlGaN/GaN High Electron Mobility Transistors and Diodes Fabricated on Large Area Silicon on poly-SiC (SopSiC) Substrates for Lower Cost and Higher Yield
T. J. Anderson, F. Ren, L. Voss, M. Hlad, B. P. Gila, S. J. Pearton, J.Kim, J. Lin, P. Bove, H. Lahreche , J. Thuret and R. Langer, Department of Chemical Engineering, University of Florida, Picogiga International SAS

Abstract

08a

MMIC Packaging and Heterogeneous Integration Using Wafer-Scale Assembly
P. Chang-Chien, X. Zeng, K. Tornquist, M. Nishimoto, M. Battung, Y. Chung, J. Yang, D. Farkas, M. Yajima, C. Cheung, K. Luo, D. Eaves, J. Lee, J. Uyeda, and M. Barsky, Northrop Grumman Space Technology

Abstract

08b

Development of Simple Electrolytes for the Electrodeposition and Electrophoretic Deposition of Pb-free, Sn-based Alloy Solder Films
Chunfen Han*, Qi Liu and Douglas G. Ive
y Department of Chemical and Materials Engineering, University of Alberta

Abstract

08c

High Yield Intra-Cavity Interconnection Fabrication Method And Characterization Methodologies
M. Yajima, P. Chang-Chien, X. Zeng, K. Luo, C. Cheung, K. Tornquist, and M. Barsky, Northrop Grumman Space Technology

Abstract

08d

Development of a Lead Free Solder Bumped RFIC Switch Process
Suzanne Combe, John S Atherton, Matthew F O’Keefe, Chris Main Filtronic IP

Abstract

08e

Development of Backside Process for Alternative Die Attach on HBT
Jason Fender, Terry Daly, Darrell Hill, Lakshmi Ramanathan, Philip Bowles, Neil Tracht, Freescale Semiconductor, Inc.

Abstract

09a

Influence of the Epitaxy on the Sub-Threshold Drain Leakage Current and the Breakdown Voltage for GaAs pHEMTs
P. Abele, F. Bourgeois, J. Splettstoesser, and D. Behammer United Monolithic Semiconductors

Abstract
09b

Gain Enhancement of Junction PHEMT Power Amplifiers for Cellular Phones
Kazuki Nomoto, Koichi Hirata, and Mitsuhiro Nakamura, MMIC Development Section, LSI Device Engineering Department, Sony Semiconductor Kyushu Corporation

Abstract
09c

High Voltage GaAs pHEMT Technology for S-band High Power Amplifiers
David Fanning, Anthony Balistreri, Edward Beam III, Kenneth Decker, Steve Evans,
Robert Eye, Warren Gaiewski, Thomas Nagle, Paul Saunier, Hua-Quen Tserng, TriQuint Semiconductor

Abstract
09d

Development of High Breakdown Voltage InGaP/GaAs DHBTs
Jiang Li, Cristian Cismaru, Pete Zampardi, Andy Wu, Eugene Babcock, Mike Sun, Kevin Stevens, and Ravi Ramanathan, Skyworks Solutions, Inc., Kopin Corporation

Abstract
09e

Industrial GaInP/GaAs high Power HBT Process for S-Band and L-Band Applications
H. Blanck, G. Jonsson, L. Favede, G. Pataut, M. Bonnet, D. Floriot
, United Monolithic Semiconductors GmbH

Abstract
10a

0.10 µm Ion-Implanted GaAs MESFETs with Low Cost Production Process
M. Watanabe, D. Fukushi, H. Yano, and S. Nakajima, Eudyna devices Inc.

Abstract
10b

pHEMT Gate Formation Using a Dielectrically Defined Gate with No Plasma Damage
M. Wayne Pickens, John W. L. Dilley, Brook D. Raymond, Tyco Electronics, Commercial Product Solutions

Abstract
10c

Planarization Process for Transparent Polyimide Coatings to Reduce Topography and Overburden Variation
Wu-Sheng Shih1, Jiro Yota2, Hoa Ly2, Ketan Itchhaporia1, and Alex Smith, Brewer Science, Inc.,
Skyworks Solutions, Inc.,

Abstract
10d

Low-Cost, High-Performance Multifunction X-band Control MMICs Using Ion- Implanted FET Technology
Monte Drinkwine, Hausila Singh and Mike Ashman,M/A-COM, Inc.,

Abstract
10e

Transfer Printed Heterogeneous Integrated Circuits
Etienne Menard, Christopher A. Bowe, Joseph Carr and John A. Rogers, Semprius, Inc., Beckman Institute for Advanced Science and technology, University of Illinois

Abstract
11a

High-Voltage GaN-HEMTs for Power Electronics Applications and Current Collapse Phenomena under High Applied Voltage
Wataru Saito, Ichiro Omura and Kunio Tsuda, Toshiba Corp. Semiconductor Company and Toshiba Corp.

Abstract
11b

An 800-W AlGaN/GaN HEMT for S-band High-Power Application
Eizo Mitani, Makoto Aojima, Arata Maekawa and Seigo Sano, Eudyna Devices, Inc.

Abstract
11c

Fabrication of a robust high-performance floating guard ring edge termination for power Silicon Carbide Vertical Junction Field Effect Transistors
Victor Veliadis, Megan McCoy, Ty McNutt, Harold Hearne, Li-Shu Chen, Gregory DeSalvo, Chris Clarke, Bruce Geil, Dimos Katsis, Skip Scozzie, Northrop Grumman Advanced Technology Laboratory,
U.S. Army Research Laboratory,

Abstract
11d

Technological challenges for manufacturing power devices in SiC
Peter Friedrichs, SiCED Electronics Development GmbH & Co. KG, a Siemens Company

Abstract
12a

III-V MOSFETs With Native Oxide Gate Dielectrics – Progress and Promise
P. Fay, X. Li, Y. Cao, J. Zhang, T. H. Kosel, and D. C. Hall
University of Notre Dame

Abstract
12b

Post-Si CMOS: III-V n-MOSFETs with High-k Gate Dielectrics
Yanning Sun,S. J. Koester, E. W. Kiewra, J. P. de Souza, N. Ruiz, J. J. Bucchignano, A. Callegari, K. E. Fogel, D. K. Sadana, J. Fompeyrine, D. J. Webb, J.- P. Locquet, M. Sousa, R. Germann,
IBM Thomas J. Watson Research Center, IBM Zürich Research Laboratory

Abstract
12c

HIGH MOBILITY III-V MOSFET TECHNOLOGY
M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, and P. Zurcher, Freescale Semiconductor, Inc.,

Abstract
13a

InGaP-Plus: Advanced GaAs BiFET Technology and Applications
William Peatman , Mohsen Shokrani, Boris Gedzberg, Wojciech Krystek, and Michael Trippe, ANADIGICS, Inc.,

Abstract
13b

HighPerformance BiHEMT HBT / ED pHEMT Integration
T. Henderson, J. Middleton, J. Mahoney, S. Varma, T. Rivers, C. Jordan, and B. Avrit
TriQuint Semiconductor

Abstract
13c

Monolithic Integration of E/Dmode pHEMT and InGaP HBT Technology on 150mm GaAs Wafers
C. K. Lin, T. C. Tsai, S. L. Yu, C. C. Chang, Y. T. Cho, J. C. Yuan, C. P. Ho, T. Y. Chou, J. H. Huang,
M. C. Tu and Y. C. Wang , WI
N Semiconductors Corporation

Abstract
13d

Commercial Viability of a Merged HBT-FET (BiFET) Technology for GaAs Power Amplifiers
Ravi Ramanathan, Mike Sun, Peter J. Zampardi, Andre G. Metzger, Vincent Ho, Cejun Wei, Peter Tran, Hongxiao Shao, Nick Cheng, Cristian Cismaru, Jiang Li, Shiaw Chang, Phil Thompson, Mark Kuhlman, Kenneth Weller , Skyworks Solutions, Inc.,

Abstract
14a

Development and Ramping of pHEMT in an “HBT Fab”
Mike Fresina, C. Barratt, C. Duncan, S. Greene, W. Lewis, L. Li, T. Rogers, C. Santana, W. Wohlmuth, and R. Yanka , RFMD

Abstract
14b

Computer Integrated Manufacturing in smaller GaAs Fabs
T. Sterk, C. Denton, N. Naul, TriQuint Semiconductor

Abstract
14c

Resist Dispense Volume Reduction Using the Six Sigma Methodology
J. Riege, A. Canlas, D. Barone, D. Crawford, Y. Recsei, S. Mony, N. Ebrahimi, Skyworks Solutions

Abstract
14d

Realizing Throughput Improvement through Machine Rate Modeling – Case Study
Marino F. Arturo, Sathish Mudabagila-Gowda, Ariel Meyuhas, MAX I.E.G. LLC

Abstract
14e

Gate Shorts: A Process Engineer’s Nightmare
Thorsten Saeger, Travis A Abshere, Fabian Radulescu and Jack Lail, TriQuint Semiconductor

Abstract
15a

Studying Package Delamination by TOF-SIMS and XPS
Luo JunHua, Yao JingZhong, Xu XueSong, Adhihetty Indira, Freescale Semiconductor (China)

Abstract
15b

High-Volume Low Frequency Noise Characterization Technique
Cristian Cismaru, Mark Banbrook, and Peter J. Zampardi, Skyworks Solutions, Inc.

Abstract
15c Hydrogen Incorporation of Metal Gate HfO2 MOS Structures on In0.2Ga0.8AsSubstrate with Si Interface Passivation Layer
InJo Ok, H.Kim, M.Zhang, F. Zhu, S. Park, J. Yum, S. Koveshnikovl, W. Tsai 1,
V. Tokranov2, M. Yakimov2, S. Oktyabrsky2, and Jack C. Lee, Intel Corporation, The University of Texas, Austin
Abstract
15d Uniformity Correlation of AlGaN/GaN HEMTs grown on 3inch SiC Substrates
C. Lee, J. Jimenez, U. Chowdhury, M. Kao, P. Saunier, T. Balistreri, A. Souzis, S. Guo, TriQuint Semiconductor
Abstract
15e

Status of SEMI Standardization Efforts in Compound Semiconductors
James D. Oliver and Russ Kremer, Northrop Grumman Electronic Systems, Freiberger Compound Materials USA

Abstract
15f

Plasma Surface Pretreatment Effects on Silicon Nitride Passivation of AlGaN/GaN HEMTs
David J. Meyer, Joseph R. Flemish, and Joan M. Redwing
Department of Materials Science and Engineering,
The Pennsylvania State University

Abstract
15g

Yield Enhancement of 0.15um pHEMT Millimeter Wave Power Amplifiers using an  Effective Statistical Analytical Approach   
Nelson Chen, Scotie Lin, C.K. Lin, Wen Chu, Paul Yeh, H.C. Chou, Joe Liu and C.S. Wu, WIN Semiconductors Corporation

Abstract
15h

Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment
Haiou LI, Chak-wah TANG, Kevin J. CHEN, and Kei May LAU, Hong Kong University of Science and Technology

Abstract
15i

A Novel WaterWashable Coating for Avoiding Contamination During Dry Laser Dicing Operations
K.C. Su, H.H. Lu, S.H. Chen, C.D. Tsai,Y.C. Chou,W.J. Wu,G.Q. Wu,and J.C. Moore, Lee Chang Yung, Chemical Industrial Corporation (LCY), OPTO Tech Corporation, DAETEC, LLC

Abstract
15j

High-Temperature Electrical Characteristics of SPDT GaAs Switches with Copper Metallized Interconnects
Y. C. Wu, E. Y. Chang, Senior Member, IEEE, Y. C. Lin and W. C. Wu, National Chiao-Tung University

Abstract
 


 

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