2008 Digests


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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"

2008 On-line Digest Table of Contents

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1.1 Market Trends for Compound Semiconductor Enabled Devices
Bruce A. Bernhardt, Motorola Mobile Devices
1.2 Abstract
1.3 Compound Semiconductors From Oddity to Commodity
Curt Barratt, RF Micro Devices
1.4 III-V on Silicon for Future High Speed and Ultra-low Power Digital Applications: Challenges and Opportunities
Robert Chau,
1.5 The DARPA Compound Semiconductors on Silicon (COSMOS) Program
Mark Rosker, Defense Advanced Research Projects Agency
1.6 Compound Semiconductors: Illinois Contributions and Perspective
Ilesanmi Adesida, University of Illinois, Urbana-Champaign
2.1 Novel GaAs Switch for Compact and Efficient Power Conversion
Mariam Sadaka1, Sriram Chandrasekaran1, Al Rozman1, Wonill Ha2, Bobby Brar2, Chanh Nguyen2, Vivek Mehrotra2 and Peter Asbeck3,
1ColdWatt, 2Teledyne Scientific and 3University of California, San Diego
2.2 Terahertz Electronics
Michael Shur, Rensselaer Polytechnic Institute
2.3 Heterointegration Technologies for “Systems in a Foil”
Karlheinz Bock, Fraunhofer Institute for Reliability and Microintegration
3.1 The Adoption of Lighting-Class LEDs into General Illumination Applications
Paul Scheidt, Cree, Inc,
3.2 Latest Advances in Multi-junction Photovoltaics
Alexander Slade, Robert McConnell and Vahan Garboushian
, Amonix Inc.
4.1 Reduction of Process Variation Through Automated Substrate Temperature
Uniformity Mapping in Multi-Wafer MBE Systems
Thomas J. Rogers, Likang Li, Robert Yanka, Chris Santana, RFMD,
Jason R. Williams, Charles A. Taylor II, Darryl Barlett, k-Space Associates, Inc.,
4.2 Development and Characterization of Photodefinable Polybenzoxazole
Buffer Layer for InGaP/GaAs HBT Applications
Dragana Barone, Jiro Yota, Hoa Ly, Stanley Mui, Shiban Tiku, and Steve Canale
Skyworks Solutions, Inc.
4.3 Integration and Qualification of a Second Site HBT Epitaxial Wafer Foundry
David Troy, Andreas Eisenbach*, Paul Cooke, Tony Pearce*,
Graham Clarke*, Iwan Davies*, Susan Barne*, IQE RF LLC, *IQE Europe Ltd., Pascal Close
4.4 Use of Chemical Mechanical Polishing for Planarization of GaAs
Integrated Circuits
Michael Meeder, Jeff Vass, Chuck Duncan, Walter Wohlmuth, Mike Fresina, and Curt Barratt, RF Micro Devices, Inc
4.5 Lessons Learned from Laser Dicing
Travis A Abshere, Moreen Minkoff, and Bill Howell, TriQuint Semiconductor,
5.1 SiC and GaN Wide Bandgap Technology Commercial Status
J.W. Milligan, S. Sheppard, W. Pribble, A. Ward, S. Wood, Cree, Inc.,
5.2 Wafer Quality Target for Current-Collapse-Free GaN-HEMTs
in High Voltage Applications
Hidetoshi Fujimoto, Wataru Saito, Akira Yoshioka, Tomohiro Nitta, Yorito Kakiuchi and Yasunobu Saito, Semiconductor Company, Toshiba Corp.
5.3 A uniform, reproducible and reliable GaN HEMT technology with breakdown
voltages in excess of 160 V delivering more than 60% PAE at 80 V
P. Waltereit1, W. Bronner1, R. Quay1, M. Dammann1, S. Müller1, R. Kiefer1, H. Walcher1, F. van Raay1, O. Kappeler1, M. Mikulla1, F. van Rijs2, T. Rödle2, S. Murad2, J. Klappe2, P. van der Wel2, P. Henriette2, B. Aleiner2, I. Blednov2, J. Thorpe3, R. Behtash3, H. Blanck3, K. Riepe3, 1Fraunhofer Institute for Applied Solid State Physics, 2NXP Semiconductors,3 United Monolithic Semiconductors,
5.4 Over 80% Drain Efficiency CW AlGaN/GaN HEMT Power Amplifier
H.P. Xin, B. Achiriloaie, V.H. Ngo and A. Mkhitarian, Tyco Electronics Inc.,
5.5 Performance Improvement of High Power High Efficiency AlGaN/GaN HEMT based on the Process Design of Experiment Approach
Yaron Knafo, Tamara Baksht, Oleg Aktushev, David Rozman and Gregory Bunin, Gal-El (MMIC),
6.1 Via etching in BCB for HBT technology
H.Stieglauer, T.Wiedenmann, H.Bretz, H.Mietz, D.Traulsen, D.Behammer , United Monolithic Semiconductors – GmbH,
6.2 Photodefinable Polybenzoxazole Interlevel Dielectric for GaAs HBT Applications
Jiro Yota, Hoa Ly, Dragana Barone, Mike Sun, and Ravi Ramanathan, Skyworks Solutions, Inc.
6.3 Advanced multilayer interconnect technology for switch ICs using InP HEMTs
Suehiro Sugitani, Kazumi Nishimura, Kiyomitsu Onodera, and Hideki Kamitsuna, NTT Photonics Laboratories, NTT Corporation
6.4 Development of an on-wafer test for rapid evaluation of doping spike carrier
concentration levels in commercially manufactured GaAs Gunn diodes for
automotive radar applications
N. Farrington1, M. Carr2, J. L. Sly1, M. Missous1
1Microelectronics & Nanostructures group, School of E&EE, University of Manchester,
2e2v Technologies (UK) Ltd,
6.5 High Yield, Highly Scalable, High Voltage GaInP/GaAs HBT Technology
P. Kurpas, B. Janke, A. Wentzel, H. Weiss*, L. Schmidt*, C. Rheinfelder*, R. Pazirandeh, A. Maaßdorf, L. Schellhase, W. Heinrich, J. Würfl
Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH),
6.6 Dry Etch Development for a Dual, Front and Backside, processing of II-VI Compound Semiconductors
A.J. Stoltz, P. R. Norton, Night Vision and Electronic Sensors Directorate,
7.1 Ultrathin all-binary AlN/GaN based high-performance RF HEMT Technology
Huili (Grace) Xing, T. Zimmermann, D. Deen, K. Wang, C. Yu, T. Kosel, P. Fay, and D. Jena, Department of Electrical Engineering, University of Notre Dame
7.2 Materials Characterization and Device Performance Survey of InAlN/GaN
HEMT Layers from Commercial Sources
M. Trejo, G. H. Jessen, A. Crespo, J.K. Gillespie, D. Langley, D. Denninghoff, and G. D. Via, Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base,
7.3 Deep Submicron GaN-based Heterostructure Field Effect Transistors with InGaN
Channel and InGaN Back-barrier Designs
Yanqing Deng, Vinod Adivarahan, and Asif Khan, Department of Electrical Engineering, University of South Carolina
7.4 Epitaxial Rare Earth Oxide Growth on GaN for Enhancement-mode MOSFETs
J. S. Jur*, V. D. Wheeler*, M. T. Veety**, D. J. Lichtenwalner*, D. W. Barlage**, M. A. L. Johnson*, North Carolina State University
7.5 Process and Performance Improvements to InGaN/GaN HBTs
Chao-Hsin Wu, Benjamin F. Chu-Kung, and Milton Feng, Department of Electrical and Computer Engineering, University of Illinois
8.1 Yield Improvement Methodology in a pHEMT GaAs Fabrication Facility
James Oerth, Christopher Doucette, Sushila Singh, Sean Doonan, Skyworks Solutions, Inc
8.2 Discovery and Elimination of Defects Causing Yield Loss on E-FET Power Amps
Tertius Rivers, Richard Helm, Jinhong Yang, Sumir Varma, Ed Etzkorn, Jeremy Middleton, Rob Christ, Bill Howell, TriQuint Semiconductor, 2
8.3 Reducing chipping defects during GaAs wafer dicing
with a four-point diamond tool
Jason Chou, Chang-Hwang Hua, Sen Yang and Ping-Wei Chen, WIN Semiconductors corp.
8.4 Defectivity Yield Improvement Activity to eliminate nitride blisters
Mike Clausen, Jason McMonagle, Bela Green, Gayle Murdoch, Andrew Miller, John Cullen, Jim Moran, Filtronic Compound Semiconductors,
9.1 Engineered Layer Transfer Substrates for Heterogeneous Integration of III-V Compound Semiconductors
M.S. Goorsky, M.B. Joshi, S.L. Hayashi, and M. Jackson, UCLA,
9.2 Advances in Large Diameter GaN on Diamond Substrates
Jerry W. Zimmer and Gerry Chandler, sp3 Diamond Technologies,
9.3 Materials Characterization Comparison of GaN HEMT-on-Diamond Layers
Pre- and Post-Attachment
John Carlin¹, Gregg Jessen¹, Jim Gillespie¹, David Tomich¹
Daniel Francis², John Wasserbauer², Firooz Faili², Dubravko Babic², Felix Ejeckam²,
Wright Patterson AFB,
9.4 Wafer-fused AlGaAs/GaAs/GaN HBTs with current gain of ~ 20 and VBR ~ 35 V
Chuanxin Lian and Huili Grace Xing, Department of Electrical Engineering, University of Notre Dame,
10.1 Reliability and MMIC Technology Development and Production
Thomas R. Block, Jeff Elliott, Yeong-Chang Chou, Mike Biedenbender, Denise Leung, David Eng, Aaron Oki, Mike Wojtowicz, and Rich Lai, Northrop Grumman Space Technology,
10.2 Evaluating Device Reliability Using Wafer-level Methodology
Dorothy June M. Hamada and William J. Roesch, TriQuint Semiconductor Inc.,
10.3 Layout Design Rule Effects on Capacitor Reliability
James D. Oliver, Harlan C. Cramer, and Richard J. Porter, Northrop Grumman Electronic Systems
10.4 Measuring Liftoff Quality and Reliability with Special Test Structures
William J. Roesch and Dorothy June M. Hamada, TriQuint Semiconductor, Inc.,
11.1 Analysis of DC-RF Dispersion in AlGaN/GaN HFETs using RF
Waveform Engineering
Chris Roff, 1 Johannes Benedikt1 and Paul J. Tasker1
D.J. Wallis, 2 K.P. Hilton, 2 J.O. Maclean, 2 D.G. Hayes, 2 M. J. Uren1,2 and T. Martin2, 1Cardiff School of Engineering, Cardiff University
11.2 Gallium Nitride Surface Treatment Study for FET Passivation Process Flow Applications
M.T. Veety*, V.D. Wheeler**, M.P. Morgensen*, M.A.L. Johnson**, D.W. Barlage*, North Carolina State University,
11.3 Nanosecond Time-Resolved Raman Thermography: Probing Device and Channel Temperature in Pulsed-Operated GaN and GaAs HEMTs
J.W. Pomeroy1, G. J. Riedel1, M. J. Uren2, T. Martin2, A. Bullen3, M. Haynes3, and M. Kuball1, 1H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom, 2QinetiQ Ltd, Malvern, Worcs WR14 3PS, United Kingdom, 3SELEX Sensors and Airborne Systems Ltd.
11.4 Charge Trapping at Surface in GaN HEMTs
Hsiang Chen, Phillip Preecha, John Lai, Guann-Pyng Li, Univ. of California, Irvine,
11.5 Evaluation of Test Methods Employed for Characterizing Semi-Insulating Nature of Monocrystaline SiC Semiconductor Materials
M.F. MacMillan1, W. Mitchel2, J. Blevins2, G. Landis2 , J. Daniel2 , R. S. Sandhu3, G. Chung1, M. Spaulding1 T. F. Zoes1, E. Emorhokpor4, C. Basceri5, J. Jenny5, E. Berkman5, Wolfgang Jantz6, W. Eichhorn7, A. Blew8, and J.D. Oliver9 Mark Fanton10, Tim Bogart10 and Bill Eversson10
1 Dow Corning Corporation,
2 Air Force Research Laboratory
3 Northrop Grumman Corporation
4 II-VI, Inc.
5 Cree, Inc.
6 SemiMap Scientific Instruments GmbH
7 Eichhorn and Hausman, GMBH
8 Lehighton Electronics
9 Northrop Grumman Corporation
10 Penn State Electro-Optics Center
12.1 GaAs MESFET with Source-Connected Field Plate for High Voltage MMICs
M. L. Balzan, M. J. Drinkwine, and T. A. Winslow*, Tyco Electronics, Inc.,
12.2 Improving the Breakdown Voltage for 100nm GaAs pHEMTs by the Support of Device Simulations
P. Abele, M. Schaefer*1, M. Hosch *2, J. Splettstoesser, and D. Behammer , United Monolithic Semiconductors – GmbH,
12.3 Design and Fabrication of a Compact GaAs IPD Balun
Jon Abrokwah, Qiang Li, Lianjun Liu, Shahin Farahani‡, Dan Miller‡,Jyoti Mondal, Adolfo Reyes‡‡ and Jim Cotronakis‡‡ +, Freescale Semiconductor Inc
12.4 Product Sensitivity Analysis on Multithrow TX/RX Switches
Jerod Mason, David Petzold, Aparna Joshi, Edward Aspell, Skyworks Solutions, Inc.
12.5 InP DHBT technology for 100 Gbit/s applications
R. Driad, R.E. Makon, F. Benkhelifa, and R. Lösch,, Fraunhofer Institute for Applied Solid State Physics,
13.1 Effect of Gate Edge Silicidation on Gate Leakage Current in AlGaN/GaN HEMTs
Toshihiro Ohki, Masahito Kanamura, Naoya Okamoto, Kenji Imanishi, Kozo Makiyama, Kazukiyo Joshin, Toshihide Kikkawa and Naoki Hara, Fujitsu Ltd. and Fujitsu Laboratories Ltd.
13.2 Technology for Non-Recessed Short Gate Length E-Mode AlGaN/GaN High-Electron Mobility Transistors
Anirban Basu, Minjun Yan, Vipan Kumar, Ilesanmi Adesida, Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering
University of Illinois at Urbana-Champaign
13.3 A Surface Treatment Technique for III-N Device Fabrication
Yun Zhang, Jae-Hyun Ryou, Russell D. Dupuis, and Shyh-Chiang Shen, School of Electrical and Computer Engineering
13.4 Pre-passivation Plasma Surface Treatment Effects on Critical Device Electrical Parameters of AlGaN/GaN HEMTs
David J. Meyer1*, Joseph R. Flemish1, and Joan M. Redwing1, 1 Department of Materials Science and Engineering, The Pennsylvania State University,
13.5 A Novel AlGaN/GaN Field-Effect Diode with a Low Turn-on Voltage Operation using Fluoride-Based Plasma Treatment
K. Takatani, T. Nozawa, T. Oka, H. Kawamura, and K. Sakuno, Advanced Technology Research Laboratories, Sharp Corporation,
14.1 An InGaP/GaAs HBT/JFET BiFET technology for PA bias circuit applications
Brian Moser, W. Wohlmuth, S. Nedeljkovic, W. Clausen, D. Halchin, R. Vass, and M. Fresina, RFMD
14.2 Nano-scale Type-II InP/GaAsSb DHBTs to Reach THz Cutoff Frequencies
William Snodgrass and Milton Feng, University of Illinois at Urbana-Champaign
14.3 The Development of a Symbolically Defined Large Signal InP/GaAsSb Type-II
DHBT Model for 200 GHz Mixed Signal Circuit Simulation
Mark Stuenkel, Yu-Ju Chuang, Kurt Cimino, William Snodgrass and Milton Feng, Department of Electrical and Computer Engineering, University of Illinois, Urbana
14.4 Thermal-Mechanical Characterization of Wafer Level Packaging Technologies
R. Sandhu, P. Chang-Chien, Mathew Parlee, B. Poust, T. Chung, R. Tsai, A. Noori, V. Temsevary, O. Fordham, X. Zeng, K. Tornquist, D. Duan, T. P. Chin, and M. Barsky, Northrop Grumman Space Technology
15.1 How to Succeed as a GaAs Foundry
Glen Riley, VP Commercial Foundry Business Unit, TriQuint Semiconductor
15.2 Eliminating the Paper Runsheet;One Fab’s Foray Into the Paperless World
Richard Helm, Travis Abshere, Lisa Huynh, Paul Brodie, Karen Zakaria, TriQuint Semiconductor,
15.3 Factory Automation beyond Recipe Selection
N. Thakkar, D. Beasley, A. Lopez, R. Caguioa, G. Hafer, Skyworks Solutions,
15.4 RF Module Assembly Overview
Wally Holgado, TriQuint Semiconductor, Inc.
16.1 The Wireless Industry: Entering a State of Confusion and Chaos
Earl J. Lum, EJL Wireless Research LLC,
16.2 Status of the SiC power devices market
Dr. Philippe ROUSSEL, Yole Développement
16.3 Are Silicon Technologies Poised to Displace GaAs?
Asif Anwar, Christopher Taylor, Stephen Entwistle, Strategy Analytics,
17.1 Maximizing Selectivity During Wet-Chemical Gold Etching
K.C. Su,a H.H. Lu,a C.C. Chen,a and J.C. Mooreb, aLee Chang Yung Electronic Materials (LCYEM)
17.2 Simple DOE-based inductor tool for design automation
K. Kwok, Shing Lee*, Rui Lin, P. Zampardi, Skyworks Solutions, Inc.
17.3 WITHDRAWN - Application of two-phase mechano-chemical polishing
to ZnO substrate technology
17.4 He+ Plasma Cleaning of Epiready InSb(112)B Surfaces for Compound Semiconductor Heteroepitaxy
M. Jaime-Vasquez, A. J. Stoltz, R.N. Jacobs, L.A. Almeida, J.D. Benson, and M. Martinka, U.S. Army Research, Development and Engineering Command (RDECOM) Communications-Electronics Research, Development and Engineering Center  CERDEC), Night Vision and Electronic Sensors Directorate (NVESD)
17.5 Monolithic Integration of an Electroabsorption Modulator into a GaAs-based Duocavity VCSEL for Resonance-free Modulation
J. van Eisden1, M. Yakimov1, V. Tokranov1, E. M. Mohammed2, I. A. Young2 and S. R. Oktyabrsky1, 1College of Nanoscale Science and Engineering, SUNY Albany,
17.6 Process Development and Characteristics of Nano III-V MOSFET
Donald Cheng, Chichih Liao, K.Y. Cheng, Milton Feng, Department of Electrical and Computer Engineering, University of Illinois

Comparative study of thermal mismatch effects in CdTe/Si,
CdTe/Ge, and CdTe/GaAs composite structures
R.N. Jacobs,1,4 L.A. Almeida,1 J. Markunas,1 J. Pellegrino,1 M. Groenert,1
M. Jaime-Vasquez,1 N. Mahadik,2 C. Andrews,2 S.B. Qadri,2 T. Lee,3 and M. Kim.3, 1- U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA 22060., 2- U. S. Naval Research Laboratory, Washington, DC 20375., 3- Department of Electrical Engineering, University of Texas

17.8 BCB etching Process using High Density Plasma
I.Toledo, R.Adler, Y. Knafo, O.Kalis , J.Kaplun, Gal-El (MMIC)
17.9 Etching of GaAs in RIE & CAPEMode – Characterization of Surface Layer
R. K. Bhardwaj, S. K. Angra, R. P. Bajpai, Nirmal Singh* & Lalit M Bharadwaj, Central Scientific Instruments Organization
17.10 Galvanic Corrosion of Aluminum in Metal Stacks
D. Eaves, J. Chen, I. Smorchkova, W. Sutton, J. Uyeda, and M. Barsky, Northrop Grumman Space Technology


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