2009 Digests

 
 

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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"

2009 On-line Digest Table of Contents

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1.1

The Current Financial Crisis and It’s Impact on the Compound Semiconductor Industry
Earl J. Lum
 

Abstract
1.2

The DARPA Wide Band Gap Semiconductors for RF Applications (WBGS-RF) Program: Phase II Results
Mark Rosker, Christopher Bozada, Harry Dietrich, Alfred Hung, Dave Via, Steve Binari,
Ed Vivierios, Eliot Cohen and Justin Hodiak

Abstract
1.3

Opportunities for Development of a Mature Concentrating Photovoltaic Power Industry
Sarah Kurtz

Abstract
2.1

GaN Power Switching Devices for Automotive Applications

Tsutomu Uesugi and Tetsu Kachi

Abstract
2.2

High Efficiency Base Station Amplifier Architectures Utilizing LDMOS and GaN High Power Transistors

Bill Vassilakis, Joseph Storniolo, Jeremy Monroe

Abstract
2.3

Challenges as an Independent GaAs Foundry– A Manufacturing Perspective

Chin-chi Chang

Abstract
3.1

Thin Film CdTe Module Manufacturing

Walter A. Wohlmuth

Abstract
3.2

Concentrating Solar Energy- Technologies and Markets Overview

Raed Sherif

Abstract
3.3

Triple-Junction Solar Cells (TJ-SC) – Support from MOCVD for Competitiveness through Improved Material Quality and Cost Reduction
B. Schineller, J. Hofeldt, R. Schreiner, G. Strauch, M. Heuken

Abstract
3.4

Status of Multijunction Solar Cells and Future Development
Tatsuya Takamoto

Abstract
4.1

High Frequency Wafer Level Reliability Test Bench with Variable Load Impedance
P. Abele, F. Bourgeois, M. Lanz, J. Grünenpütt, R. Behtash, J. Thorpe and D. Behammer

Abstract
4.2

Lifetime Estimation of Intrinsic Silicon Nitride MIM Capacitors in a GaN MMIC Process
Sefa Demirtas, Jesus A. del Alamo, Donald A. Gajewski, Allen Hanson

Abstract
4.3

PECVD Silicon Nitride Film Property and Pre-deposition Surface Treatment Effects on MIMCAP Reliability for InGaP/GaAs HBT Applications
Tony Wang

Abstract
4.4

Investigating the ESD Robustness of RF Circuits and Elements by Transmission Line Pulsing
Heinrich Wolf, Horst Gieser, Karlheinz Bock

Abstract

4.5

RF Test Gage R&R Improvement
James Oerth and Mike Downs

Abstract
5.1

Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance
K. Matsushita, H. Sakurai, S. Teramoto, J. Shim, H. Kawasaki, K. Takagi, Y. Takada and K. Tsuda

Abstract
5.2

Process Benchmarking of SiC Backside Via Manufacturing for GaN HEMT Technology
H.Stieglauer, G.Bödege, D.Öttlin, M.Ilgen, H.Blanck and D.Behammer

Abstract
5.3

Very Low Sheet Resistance AlN/GaN High Electron Mobility Transistors
C.Y. Chang, T.J. Anderson, F. Ren, S.J. Pearton, A.M. Dabiran, A.M. Wowchak, B. Cui, and P.P. Chow

Abstract
5.4

A Biosensor Based on GaN Field Effect Transistor
Siddharth Alur, Tony Gnanaprakasa, Hui Xu, Yaqi Wang, Aleksandr L. Simonian, Omar A
. Oyarzaba, and Minseo Park

Abstract
5.5

Wide Bandgap GaN Smart Power Chip Technology
King-Yuen Wong, Wanjun Chen, and Kevin J. Chen

Abstract
6.1

Processing Methods for Low Ohmic Contact Resistance in AlN/GaN MOSHEMTs
K. Chabak, A. Crespo, D. Tomich, D. Langley, V. Miller, M. Trejo, J.K. Gillespie,
G.D. Vi
a , A.M. Dabiran, A.M. Wowchak, B. Cui, P.P. Chow

Abstract

6.2

A Cu Metalized Power InGaP/GaAs Heterojuction Bipolar Transistor with Pd/Ge/Cu Alloyed Ohmic Contact
S. P. Wang, Y. C Lin, Y. L. Tseng, K. S. Chen, J. C. Huang and E. Y. Chang

Abstract

6.3

Copper Interconnect on GaAs pHEMT by Evaporation Process
Kezia Cheng

Abstract
6.4

TiWN Thin Film Resistor Process Control
J.W.Crites and M.J.Drinkwine

Abstract
6.5

Process Development of GaAs Based RF MEMS Switch
P.Suryanarayana, A.A.Naik, Ch.Sridar, V.S.N. Murthy, J.Ravikiran, M.Renju, Sandeep, S.D. Prasad, Rao, A.Mangatayaru, S.K. Koul, and R.Muralidharan

Abstract
7.1

SiC Backside Via-hole Process For GaN HEMT MMICs Using High Etch Rate ICP Etching
Naoya Okamoto, Toshihiro Ohki, Satoshi Masuda, Masahito Kanamura, Yusuke Inoue, Kozo Makiyama, Kenji Imanishi, Hisao Shigematsu, Toshihide Kikkawa, Kazukiyo Joshin, and Naoki Hara

Abstract
7.2

High-Volume 0.25 mm AlGaAs/InGaAs E/D pHEMT Process Utilizing Optical Lithography
Corey Nevers, Andrew T. Ping, Tertius Rivers, Sumir Varma, Fred Pool, Moreen Minkoff, Ed Etzkorn, Otto Berger

Abstract
7.3

SiC Substrate Via Etch Process Optimization
Ju-Ai Ruan, Sam Roadman, Cathy Lee, Cary Sellers, Mike Regan

Abstract
7.4

Influence of Dielectric Plasma Etch Source for PHEMT Device Performance
F.S. Pool, Andrew T. Ping, and Michele Wilson

Abstract
7.5

Fabrication Process and 110 GHz Measurement Result of MS-to-CPW RF-Via Transition for RF-MEMS Devices Packaging Applications
Li-Han Hsu, Wei-Cheng Wu, Edward Yi Chang, Herbert Zirath, Yun-Chi Wu, and Chin-Te Wang and Szu-Ping Tsai

Abstract
8.1

Accurate Channel Temperature Measurement in GaN-based HEMT Devices and its Impact on Accelerated Lifetime Predictive Models
B. Claflin, E. R. Heller, B. Winningham, J. E. Hoelscher, M. Bellott, K. Chabak,  A. Crespo, J. Gillespie, V. Miller, M. Trejo, G. H. Jessen, and G. D. Via

Abstract
8.2

Field Dependent Self-Heating Effects in High-Power AlGaN/GaN HEMTs
M. Hosch, J. W. Pomeroy, A. Sarua, M. Kuball, H. Jung, and H. Schumacher

Abstract
8.3

Determination of Junction Temperature of GaN-based Light Emitting Diodes by Electroluminescence and Micro-Raman Spectroscopy
Yaqi Wang, Hui Xu, Siddharth Alur, An-Jen Cheng, Minseo Park, Sharukh Sakhawat, Arindra N. Guha, Okechukwu Akpa, Saritha Akavaram and Kalyankumar Das

Abstract
8.4

Temperature Diagnosis of Bulk GaN-based Schottky Diode by Raman Spectroscopy
Hui Xu, Siddharth Alur, Yaqi Wang, An-Jen Cheng, Kilho Kang, Claude Ahyi, John Williams, Minseo Park, Chaokang Gu, Andrew Hanser, Tanya Paskova, Edward A. Preble, Keith R. Evans, and Yi Zhou

Abstract
8.5

Thermal and Piezoelectric Stress in Operating AlGaN/GaN HFET Devices and Effect of the Fe Doping in the GaN Buffer Layer
A. Sarua1, T. Batten, H. Ji, M. J. Uren, T. Martin, and M. Kuball

Abstract
9.1

Bulk Growth of GaN by HVPE
H.Ashraf, R.Kudrawiec, J. Misiewicz, P.R.Hageman

Abstract
9.2

Orientation Control of Bulk GaN Substrates Grown via Hydride Vapor Phase Epitaxy
P.R. Daniels, E.A Preble, T. Paskova, and D. Hanser

Abstract
9.3

Withdrawn

Abstract
9.4

PVD of AlN Nucleation Layers for GaN-based LED Structures: A Cheaper and Brighter Alternative
D. Hanser, E.A. Preble, T. Clites, T. Stephenson, R. Jacobs, T. Johnson, T. Paskova, and K.R. Evans

Abstract
10.1

Maintaining a Green Fab through the Strategic Use of an Environmental Management System
Ernest Diaz and Troy Schulze

Abstract
10.2

Characterization of Arsenic Rich Waste Slurries Generated During Gallium Arsenide Wafer Lapping and Polishing.
Keith W. Torrance, Helen E. Keenan,. Jan Sefcik, Andrew Hursthouse, David Livingstone

Abstract
10.3

Improving Organizational Performance through Goal Deployment
Andy Hunt and James Oerth

Abstract
10.4

Web-Based Business Intelligence for Semiconductor Manufacturing
Leo Sennott, Jorge Willemsen

Abstract
10.5

Cycle Time and Cost Reduction Benefits of an Automated Bonder and Debonder System for a High Volume 150 mm GaAs HBT Back-end Process Flow
Dave Kharas, Nagul Sooriar

Abstract
11.1

In Situ Monitoring of HBT Epi Wafer Production: The Continuing Push Towards Perfect Quality and Yields
E. M. Rehder, K. Tsai, P. Rice, C. R. Lutz, and K. S. Stevens

Abstract
11.2

HBT Epitaxial Material Matching and Qualification for High Volume Production
Mike Sun, Peter Zampardi, Cristian Cismaru, and Lance Rushing

Abstract
11.3

Dramatic Reduction of Surface Defects and Particles on pHEMT epi-wafers grown by MOVPE for higher yield of Transistors
Hiroyuki Kamogawa, Hisataka Nagai, Kazuto Takano and Yohei Otoki

Abstract
11.4

pHEMT Switch Yield Improvement Through Feedback From 100% Die Test
M. C. Tu, Paul Yeh, S. M. Liu, H. Y. Ueng and W. D. Chang

Abstract
12.1

Advanced GaAs MMIC Fabrication Process with PIN Diodes for ESD Protection
Kaoru Miyakoshi, Takehiko Kameyama, and Koichi Nagata

Abstract
12.2

Monolithically Integrated GaInP/GaAs High-Voltage HBTs and Fast Power Schottky Diodes for Switch-Mode Amplifiers
P. Kurpas, A. Wentzel, B. Janke, C. Meliani, W. Heinrich, J. Würfl

Abstract
12.3

Device Technology Based on New III-N Heterostructures
Masaaki Kuzuhara

Abstract
12.4

0.15 Micron Gate 6-inch pHEMT Technology by Using I-Line Stepper
Cheng-Guan Yuan, S.M. Joseph Liu, Der-Wei Tu, Rex Wu, Jeff Huang, Frank Chen and Yu-Chi Wang

Abstract
12.5

Recessed JPHEMT Technology for Low Distortion and Low Insertion Loss Switch
Shinichi Tamari, Koji Wakizono, Yuji Ibusuki and Mitsuhiro Nakamura

Abstract
13.1

Six-Sigma Methodologies Support Back-End Yield and Quality Metrics Improvement
Tom Hand, Jennifer Welborn, and Jim Oerth

Abstract
13.2

Self Aligned Field-Plate PHEMT for 5.8 GHz Operation
K. Moore, M. C De Baca, J-H. Huang, O. Hartin, H. Stewart, S. Shaw, C. Gaw, T. Arnold, M. Miller, C.E. Weitzel, and J. Cotronakis

Absract
13.3

Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing
Kezia Cheng

Abstract
13.4

Optimization of Bi-layer Lift-Off Resist Process
Jeremy Golden, Harris Miller, Dan Nawrocki, Jack Ross

Abstract
14.1

Manufacture of Sb-Based Type II Strained Layer Superlattice Focal Plane Arrays
Meimei Z. Tidrow, Lucy Zheng, Hank Barcikowski, James Wells, Leslie Aitcheson

Abstract
14.2

Low Threshold Current Density InAs Quantum Dash Lasers on InP Using DoublE Cap Technique
D. Zhou, B.O. Fimland, R. Piron, O. Dehaese, F. Grillot and S. Loualiche

Abstract
14.3

Monolithically Integrated III-V and Si CMOS Devices on Silicon on Lattice Engineered Substrates (SOLES)
J.R. LaRoche, W.E. Hoke, T.E. Kazior, D. Lubyshev, J. M. Fastenau, W. K. Liu, M. Urteaga, W. Ha, J. Bergman, M. J. Choe, B. Brar, M. T. Bulsara, E. A. Fitzgerald, D. Smith, D. Clark,  R. Thompson, C. Drazek, N. Daval, L. Benaissa and E. Augendre

Abstract
14.4

Technology for Dense Heterogeneous Integration of InP HBTs and CMOS
Y. Royter, P.R. Patterson, J.C. Li, K.R. Elliott, T. Hussain, M.F. Boag-O’Brien, J.R. Duvall, M.C. Montes, D.A. Hitko, M. Sokolich, D.H. Chow and P.D. Brewer

Abstract
15.1

Semiconductor Industry - RCRA Air Emission Equipment Leak Standards
Sara Burson and Danny Kringel

Abstract
15.2

Paradigm Shift in Compound Semiconductor Production since the Introduction of Laser Dicing
Rene Hendriks, Jeroen van Borkulo and Mark Mueller

Abstract
15.3

Use of Failure Modes and Effects Analysis (FMEA) Methodology in Evaluation of Process Transfer of Ohmic Liftoff from Low-Pressure-Solvent to High-Pressure-NMP Liftoff
J.W.Crites and S.W.Kittinger

Abstract
15.4

150 nm InP HBT Process with Two-Level Airbridge Interconnects and MIM Capacitors for Sub-Millimeter Wave Research
William Snodgrass, Mark Stuenkel, and Milton Feng

Abstract
15.5

The Effects of Chemical Treatment and Storage Time on the Surface Chemistry of Semi-Insulating Gallium Arsenide
Thomas Mirandi and Douglas J. Carlson

Abstract


 

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