2010 Digests

 
 

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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"

2010 On-line Digest Table of Contents

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  Click title for full PDF version of paper Page Abstract
1: Plenary 1
1.1

Green Semiconductor Manufacturing - Potential New Routes Using Aqueous Solultion Chemistry

David C. Johnson, University of Oregon, Darren Johnson, University of Oregon, John F. Wager, Oregon State University and Douglas Keszler, Oregon State University

Page 3 Abstract
1.2

Site Environmental Sustainability Achievements at Avago Technologies, Fort Collins, CO

Steve Wolley, Avago Technologies

Page 7 Abstract
1.3

Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity

Cong Huang, Delft Institute of Microsystems and Nanoelectronics (DIMES), Koen Buisman, Delft Institute of Microsystems and Nanoelectronics (DIMES), Peter J. Zampardi, Skyworks Solutions, Lis K. Nanver, Delft Institute of Microsystems and Nanoelectronics (DIMES), Lawrence E. Larson, University of California, San Diego and Leo C. N. de Vreede, Delft Institute of Microsystems and Nanoelectronics (DIMES)

Page 13 Abstract
2: Plenary 2 - RF Modules
2.1

Market & Technology of RF Modules, Focusing on Front End Modules for Cellular Terminals

Y. Andoh, Navian, Inc.

Page 21 Abstract
2.2

Panel Discussion -TriQuint

Frank Juskey, TriQuint Semiconductor

Page 25 Abstract
2.3

Panel Discussion -Skyworks

Peter J. Zampardi, Skyworks Solutions

Page 27 Abstract
2.4

Panel Discussion - Avago

Ray Parkhurst, Avago Technologies

Page 28 Abstract
2.5

Panel Discussion - RF Micro Devices

Frank Stewart, RF Micro Devices

Page 29 Abstract
3a: Business Analysis
3a.1.

Market Trends for Compound Semiconductor Enabled Devices, 2010 Update

Bruce Bernhardt, Research in Motion

Page 33 Abstract
3a.2

The Evolution of the BTS Market: Going Green and Transitioning from a Hardware to Software/Services Oriented Business Model

Earl J. Lum, EJL Wireless

Page 37 Abstract
3b: Team Torture
3b.1

Team Torture: Developing a Standard Qualification for Power Amplifier Modules

Bill Roesch, TriQuint Semiconductor, Leslie Marchut, RF Micro Devices, Bryan Shelton, Mimix Broadband, Alex Young, ANADIGICS, Steve Randle, Avago Technologies, Lance Rushing, Skyward Solutions and CS Bhasker, Skyward Solutions

Page 43 Abstract
4: Device Technology
4.1

Improvement in Yield and Assurance in Power Performance for Quarter-Micron Optical Gate 8V Power pHEMT Technology

Cheng-Guan Yuan, WIN Semiconductor, S. M. Joseph Liu, WIN Semiconductor, Clement Huang, WIN Semiconductor, Jiro Ho, WIN Semiconductor, Frank Chen, WIN Semiconductor, Chien-Liang Chan, WIN Semiconductor and Jung-Tao Chung, WIN Semiconductor

Page 47 Abstract
4.2

W-Band Penta-Composite Channel InAlAs/InGaAs Metamorphic HEMT for High Power Application and Comparison with Pseudomorphic HEMT

Partha Mukhopadhyay, Indian Institute of Technology - Kharagpur, Sudip Kundu, Indian Institute of Technology - Kharagpur, Palash Das, Indian Institute of Technology - Kharagpur, Saptarshi Pathak, Indian Institute of Technology - Kharagpur, Edward Y Chang, National Chiao Tung University and Dhrubes Biswas, Indian Institute of Technology - Kharagpur

Page 51 Abstract
4.3

A Foundry-Ready Ultra High fT InP/InGaAs DHBT Technology

Yufei Yang, Global Communication Semiconductors, Dave Rasbot, Global Communication Semiconductors, Chung-Hsu Chen, Global Communication Semiconductors, Bryan Lee, Global Communication Semiconductors, Wing Yau, Global Communication Semiconductors, Daniel Hou, Global Communication Semiconductors and Dave Wang, Global Communication Semiconductors

Page 55 Abstract
4.4

The Development of 0.5um High Linearity and Good Thermal Stability AlGaAs/GaAs HFET for Wireless Infrastructure Application

Cheng-Kuo Lin, WIN Semiconductor, Shu-Hsiao Tsai, WIN Semiconductor, Chao-Hong Chen, WIN Semiconductor, Ru-Yong Chen, WIN Semiconductor, Jen-Hao Huang, WIN Semiconductor and Yu-Chi Wang, WIN Semiconductor

Page 59 Abstract
5: Reliability
5.1

High Volume Test Methodology for HBT Device Ruggedness Characterization

Cristian Cismaru, Skyworks Solutions, Hal Banbrook, Skyworks Solutions and Peter J. Zampardi, Skyworks Solutions

Page 65 Abstract
5.2

TaN Resistor Reliability Studies

Gergana I. Drandova, TriQuint Semiconductor and Kenneth D. Decker, TriQuint Semiconductor

Page 69 Abstract
5.3

Investigation and Improvement of Early MIM Capacitor Breakdown with a Focus on Edge Related Failures

Jason Gurganus, Cree, Inc., Terry Alcorn, Cree, Inc., Andy MacKenzie, Cree, Inc. and Zoltan Ring, Cree, Inc.

Page 73 Abstract
5.4

High Voltage Capacitors with Increased Lifetimes Using SiN Dielectrics

Robert Slater, TriQuint Semiconductor

Page 77 Abstract
6: Manufacturing
6.1

Skyworks Solutions Six Inch GaAs Conversion

Glenn Hafer, Skyworks Solutions

Page 83 Abstract
6.2

Automation for Better Fab Efficiency

Nirav Thakker, Skyworks Solutions, Doug Beasley, Skyworks Solutions, Alma Lopez, Skyworks Solutions and Glenn Hafer, Skyworks Solutions

Page 87 Abstract
6.3

Yield and Efficiency Improvements Using Multi-Field Hall Measurements for High Volume pHEMT Production

Robert Yanka, RF Micro Devices, Likang Li, RF Micro Devices and Andrew Shelton, RF Micro Devices

Page 91 Abstract
6.4

Effective Manufacturing Utilizing Mass Metrology

Mark Berry, Metryx, Inc., Liam Cunnane, Metryx, Inc., Adrian Kiermasz, Metryx, Inc. and Michael T. McClure, TriQuint Semiconductor

Page 95 Abstract
7: GaN Growth & Characterization
7.1

Comparative High-Temperature DC Characterization of HEMTs with GaN and AlGaN Channel Layers

M. Hatano, University of Fukui, N. Kunishio, University of Fukui, H. Chikaoka, University of Fukui, J. Yamazaki, University of Fukui, Z. B. Makhzani, University of Fukui, N. Yafune, Japan R & D Center for Metal, Sharp Corp., K. Sakuno, Sharp Corp., S. Hashimoto, Sumitomo Electric Industries, K. Akita, Sumitomo Electric Industries, Y. Yamamoto, University of Fukui and M. Kuzuhara, University of Fukui

Page 101 Abstract
7.2

Growth of LEC Structures on Six Inch Sapphire: Challenges and Improvements

R. Schreiner, AIXTRON, A. Alam, AIXTRON, H. Protzmann, AIXTRON, B. Schineller, AIXTRON and M. Heuken, AIXTRON

Page  105 Abstract
7.3

Benchmarking of Thermal Boundary Resistance of GaN-SiC Interfaces for AlGaN/GaN HEMTs: US, European and Japanese Suppleirs

Martin Kuball, University of Bristol, Nicole Killat, University of Bristol, Athikom Manoi, University of Bristol and James W. Pomeroy, University of Bristol

Page 109 Abstract
7.4

Ultra-Low Ohmic Contacts to N-Polar GaN HEMTs by In(Ga)-Based Source-Drain Regrowth by Plasma MBE

Sansaptak Dasgupta, University of California, Santa Barbara, Nidhi, University of California, Santa Barbara, David F. Brown, University of California, Santa Barbara, T. E. Mates, University of California, Santa Barbara, Stacia Keller, University of California, Santa Barbara, James S. Speck, University of California, Santa Barbara and Umesh K. Mishra, University of California, Santa Barbara

Page 111 Abstract
8: Process Metal
8.1

Wafer Level Bump Technology for III-V MMIC Manufacturing

X. Zeng, Northrop Grumman Space Technology, P. Chang-Chien, Northrop Grumman Space Technology, K. Hennig, Northrop Grumman Space Technology, C. Chueng, Northrop Grumman Space Technology, T. Chung, Northrop Grumman Space Technology, G. Akerling, Northrop Grumman Space Technology, J. Gan, Northrop Grumman Space Technology, J. Uyeda, Northrop Grumman Space Technology, M. Barsky, Northrop Grumman Space Technology and A. Oki, Northrop Grumman Space Technology

Page 117 Abstract
8.2

Development of an I-Line Negativge Resist Process for High Resolution Liftoff Applications

Suzanne Combe, TriQuint Semiconductor and Elda Clarke, TriQuint Semiconductor

Page 119 Abstract
8.3

Challenges of Transferring a TaN Reactive Sputter Deposition Process from a Batch Tool to a Single Wafer Tool During a 4" to 6" Wafer Conversion

Erika Schutte, Skyworks Solutions, Heather Knoedler, Skyworks Solutions and Ernesto Ambrocio, Skyworks Solutions

Page 123 Abstract
8.4

Effects of Electron Radiation Generated During E-Beam Evaporation on a Photoresist Liftoff Process

Kezia Cheng, Skyworks Solutions, Minh Le, Skyworks Solutions, Donald Mitchell, Skyworks Solutions and Larry Hanes, Skyworks Solutions

Page 127 Abstract
8.5

Improved Emitter Resistance Through the Use of Barrier Metals

Alan Bratschun, Avago Technologies and T. C. Tsai, WIN Semiconductor

Page 131 Abstract
9: GaN Devices and Manufacturing
9.1

High Efficiency and Low Leakage AlGaN/GaN HEMTs for a Robust, Reproducible and Reliable X-Band MMIC Space Technology

P. Waltereit, Fraunhofer Institute - Freiburg, W. Bronner, Fraunhofer Institute - Freiburg, R. Kiefer, Fraunhofer Institute - Freiburg, R. Quay, Fraunhofer Institute - Freiburg, J. Kuehn, Fraunhofer Institute - Freiburg, F. van Raay, Fraunhofer Institute - Freiburg, M. Dammann, Fraunhofer Institute - Freiburg, S. Mueller, Fraunhofer Institute - Freiburg, C. Libal, Fraunhofer Institute - Freiburg, T. Meier, Fraunhofer Institute - Freiburg, M. Mikulla, Fraunhofer Institute - Freiburg and O. Ambacher, Fraunhofer Institute - Freiburg

Page 137 Abstract
9.2

Stable and Reproducible AlGaN/GaN HFET Processing Highly Tolerant for Epitaxial Quality Variation

P. Kurpas, Ferdinand Braun Institut fuer Hoechstfrequenztechnik, I. Selvanathan, Ferdinand Braun Institut fuer Hoechstfrequenztechnik, M. Schultz, Ferdinand Braun Institut fuer Hoechstfrequenztechnik, H. Sahin, United Monolithic Semiconductors, P. Ivo, Ferdinand Braun Institut fuer Hoechstfrequenztechnik, M. Matalla, Ferdinand Braun Institut fuer Hoechstfrequenztechnik, J. Splettstoesser, United Monolithic Semiconductors, A. Barnes, ESA/ESTEC and J. Wuerfl, Ferdinand Braun Institut fuer Hoechstfrequenztechnik

Page 141 Abstract
9.3

Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation

Hongwei Chen, Hong Kong University of Science and Technology, Maojun Wang, Hong Kong University of Science and Technology and Kevin J. Chen, Hong Kong University of Science and Technology

Page 145 Abstract
9.4

Optimization of AlGaN/GaN HEMT Ohmic Contacts for Improved Surface Morphology with Low Contact Resistance

H. P. Xin, Northrop Grumman Space Technology, S. Poust, Northrop Grumman Space Technology, W. Sutton, Northrop Grumman Space Technology, D. Li, Northrop Grumman Space Technology, D. Lam, Northrop Grumman Space Technology, I. Smorchkova, Northrop Grumman Space Technology, R. Sandhu, Northrop Grumman Space Technology, B. Heying, Northrop Grumman Space Technology, J. Uyeda, Northrop Grumman Space Technology, M. Barsky, Northrop Grumman Space Technology, M. Wojtowicz, Northrop Grumman Space Technology and R. Lai, Northrop Grumman Space Technology

Page 149 Abstract
9.5

Impact of Gate Metal Fringe Removal on Small Signal RF Gain of AlGaN/GaN HEMTs

Reza Behtash, United Monolithic Semiconductors, James R. Thorpe, United Monolithic Semiconductors, S. Held, United Monolithic Semiconductors, Dominik Schrade-Koehn, University of Ulm and Herve Blanck, United Monolithic Semiconductors

Page 153 Abstract
10: Process Etching
10.1

Elimination of Yield Loss Due to Rogue Polyimide Vias

David Crawford, Skyworks Solutions, Yelda Rescei, Skyworks Solutions, Manjeet Singh, Skyworks Solutions, Dragana Barone, Skyworks Solutions, Samuel Mony, Skyworks Solutions and Shiban Tiku, Skyworks Solutions

Page 159 Abstract
10.2

The Use of Optical Emission Spectroscopy to Solve Manufacturing Scaling Issues

A. J. Stoltz, US Army REDCOM, J. D. Benson, US Army REDCOM and P. J. Smith, US Army REDCOM

Page 163 Abstract
10.3

The Use of Optical Emission Interferometry for Controlled Etching of III-V Materials

D. Johnson, Plasma-Therm, D. Geerpuram, Plasma-Therm, C. Johnson, Plasma-Therm, L. Martinez, Plasma-Therm and J. Plumhoff, Plasma-Therm

Page 167 Abstract
10.4

Electrochemical Etching of Ion Implanted Channel Regions in GaAs

J. Crites, Cobham DES, J. Dilley, Cobham DES, S. Kittenger, Cobham DES, W. Pickens, Cobham DES, W. Polhamus, Cobham DES, M. Balzan, Cobham DES and M. Drinkwine, Cobham DES

Page 171 Abstract
10.5

Pre-Photolithographic GaAs Surface Treatment for Improved Photoresist Adhesion During Wet Chemical Etching and Improved Wet Etch Profiles

A. J. Grine, Sandia National Laboratory, J. B. Clevenger, Sandia National Laboratory, M. J. Martinez, Sandia National Laboratory, F. H. Austin, LMATA, P. S. Vigil, LMATA, K. L. Romero, LMATA, R. Timon, Sandia National Laboratory, G. A. Patrizi, Sandia National Laboratory and C. T. Sullivan, Sandia National Laboratory

Page 175 Abstract
11: Emerging GaN-Based Barrier Structures
11.1

Ultra-Thin Barrier Layers for mm Wave Frequencies in III-N HEMT Technologies

J. K. Gillespie, Air Force Research Lab, A. Crespo, Air Force Research Lab, K. Chabak, Air Force Research Lab, M. Kossler, Air Force Research Lab, V. Trimble, Air Force Research Lab, M. Trejo, Air Force Research Lab, G. D. Via, Air Force Research Lab, B. Winningham, Air Force Research Lab, B. Poling, Wyle Labs and D. Walker, Jr., Wyle Labs

Page 181 Abstract
11.2

High Performance InAlN/GaN HEMTs on SiC Substrates

Han Wang, Massachusetts Institute of Technology, Jinwook W. Chung, Massachusetts Institute of Technology, Xiang Gao, IQE RF, Shiping Guo, IQE RF and Tomas Palacios, Massachusetts Institute of Technology

Page 185 Abstract
11.3

N-Face GaN-Based Microwave Metal-Insulator-Semiconductor High Electron Mobility Transistors by Plasma-Assisted Molecular Beam Epitaxy

Man Hoi Wong, University of California, Santa Barbara, Yi Pei, University of California, Santa Barbara, David F. Brown, University of California, Santa Barbara, James S. Speck, University of California, Santa Barbara, Umesh K. Mishra, University of California, Santa Barbara, Michael Schuette, Ohio State University, Hyeongnam Kim, Ohio State University, Venkatesh Balasubramanian, Ohio State University and Wu Lu, Ohio State University

Page 189 Abstract
11.4

Molecular Beam Epitaxy Regrowth of Ohmics in Metal-Face AlN/GaN Transistors

Chuanxin Lian, University of Notre Dame, Yu Cao, University of Notre Dame, Ronghua Wang, University of Notre Dame, Guowang Li, University of Notre Dame, Tom Zimmermann, University of Notre Dame, Debdeep Jena, University of Notre Dame and Huili Xing, University of Notre Dame

Page 193 Abstract
11.5

Demonstration of Enhancement Mode AlN/Ultrathin AlGaN/GaN HMETs Using a Selective Wet Etch Approach

T. J. Anderson, Naval Research Laboratory, M. J. Tadjer, University of Maryland, M. A. Mastro, Naval Research Laboratory, J. K. Hite, Naval Research Laboratory, K. D. Hobart, Naval Research Laboratory, C. R. Eddy, Jr., Naval Research Laboratory and F. J. Kub, Naval Research Laboratory

Page 197 Abstract
12: Emerging Technology A
12.1

Compound Semiconductor Based Tunnel Transistor Logic

Suman Datta, Pennsylvania State University, S. Mookerjea, Pennsylvania State University, D. Mohata, Pennsylvania State University, L. Liu, Pennsylvania State University, V. Saripalli, Pennsylvania State University, V. Narayanan, Pennsylvania State University and T. Mayer, Pennsylvania State University

Page 203 Abstract
12.2

Enhancement-mode Pseudomorphic In0.22Ga0.78As-channel MOSFETs
with InAlP Native Oxide Gate Dielectric

Xiu Xing, University of Notre Dame and Patrick J. Fay, University of Notre Dame

Page 207 Abstract
12.3

A Study on the Base Recombination Current in NPN GaN/InGaN DHBTs

Yi-Che Lee, Georgia Institute of Technology, Hee-Jin Kim, Georgia Institute of Technology, Yun Zhang, Georgia Institute of Technology, Suk Choi, Georgia Institute of Technology, Russell D. Dupuis, Georgia Institute of Technology, Jae-Hyun Ryou, Georgia Institute of Technology and Shyh-Chiang Shen, Georgia Institute of Technology

Page 211 Abstract
12.4

Recent Progress in Rare Earth-Doped Semiconductors

Yasufumi Fujiwara, Osaka University, Atsushi Nishikawa, Osaka University and Yoshikazu Terai, Osaka University

Page 215 Abstract
13: GaN Power Switching
13.1

GaN on Si-Based Power Devices: An Opportunity to Significantly Impact Global Energy Consumption

Michael Briere, ACCO Enterprises

Page 221 Abstract
13.2

GaN-on-Si for Power Conversion

M. Germain, IMEC, J. Derluyn, IMEC, M. Van Hove, IMEC, F. Medjdoub, IMEC, J. Das, IMEC, D. Marcon, IMEC, S. Degroote, IMEC, K. Cheng, IMEC, M. Leys, IMEC, D. Visalli, IMEC, P. Srivastava, IMEC, K. Geens, IMEC, J. Viaene, IMEC, B. Sijmus, IMEC, S. Decoutere, IMEC and G. Borghs, IMEC

Page 225 Abstract
13.3

AlGaN/GaN Schottky Barrier Diodes Employing Diamond-Like Carbon Passivation

Ogyun Seok, Seoul National University, Young-Hwan Choi, Seoul National University, Minki Kim, Seoul National University, Jumi Kim, Sungkyunkwan University, Byungyou Hong, Sungkyunkwan University and Min-Koo Han, Seoul National University

Page 229 Abstract
13.4

AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier with Punch-Through Breakdown Immunity and Low On-Resistance

Chunhua Zhou, Hong Kong University of Science and Technology, Wanjun Chen, Hong Kong University of Science and Technology, Edwin L. Piner, Nitronex Corp. and Kevin J. Chen, Hong Kong University of Science and Technology

Page 233 Abstract
13.5

High Breakdown Voltage AlGaN/GaN HEMTs Emplying Recessed Gate Edge Structure

Minki Kim, Seoul National University, Young-Hwan Choi, Seoul National University, Jiyong Lim, Seoul National University, Young-Shil Kim, Seoul National University, Ogyun Seok, Seoul National University and Min-Koo Han, Seoul National University

Page 237 Abstract
14: Emerging Technology B
14.1

Silicon Carbide Micro/Nano Systems for Extreme Environment

Fang Liu, University of California, Berkeley and Roya Maboudian, University of California, Berkeley

Page 243 Abstract
14.2

Record Cell Efficiencies Hold Promising Future for Thin-Film Photovoltaics

Chris Constantine, Oerlikon Solar

Page 245 Abstract
14.3

Design and Layout of Multi-GHz Operation of Light-Emitting Diodes

Chao-Hsin Wu, University of Illinois, Gabriel Walter, University of Illinois, Han Wui Then, University of Illinois and Milton Feng, University of Illinois

Page 247 Abstract
14.4

High Output Power Density and Low Leakage Current of InGaN/GaN Nanorod Light Emitting Diodes with Mechanical Polishing Process

Liang-Yi Chen, National Taiwan University, Ying-Yuan Huang, National Taiwan University, Chun-Siang Chang, National Taiwan University and Jian-Jang Huang, National Taiwan University

Page 251 Abstract
15: Backside Processing
15.1

Backside Process Considerations for Fabricating Millimeter-Wave GaN HEMT MMICs

Naoya Okamoto, Fujitsu and Fujitsu Laboratories, Toshihiro Ohki, Fujitsu and Fujitsu Laboratories, Kozo Makiyama, Fujitsu and Fujitsu Laboratories, Atsushi Yamada, Fujitsu and Fujitsu Laboratories, Satoshi Masuda, Fujitsu and Fujitsu Laboratories, Masahito Kanamura, Fujitsu and Fujitsu Laboratories, Yoichi Kamada, Fujitsu and Fujitsu Laboratories, Kenji Imanishi, Fujitsu and Fujitsu Laboratories, Hisao Shigematsu, Fujitsu and Fujitsu Laboratories, Toshihide Kikkawa, Fujitsu and Fujitsu Laboratories, Kazukiyo Joshin, Fujitsu and Fujitsu Laboratories and Naoki Hara, Fujitsu and Fujitsu Laboratories

Page 257 Abstract
15.2

Mobile Electrostatic Carrier (MEC) for a GaAs Wafer Backside Manufacturing Process

H. Stieglauer, United Monolithic Semiconductors, J. Noesser, United Monolithic Semiconductors, A. Miller, United Monolithic Semiconductors, M. Lanz, United Monolithic Semiconductors, D. Oettlin, United Monolithic Semiconductors, G. Jonson, United Monolithic Semiconductors, D. Behammer, United Monolithic Semiconductors, C. Landesberger, Fraunhofer Institute - Munich, H.-P. Spoehrle, Fraunhofer Institute - Munich and K. Bock, Fraunhofer Institute - Munich

Page 261 Abstract
15.3

Low RF Power SiC Substrate Via Etch

Ju-Ai Ruan, TriQuint Semiconductor, Sam Roadman, TriQuint Semiconductor and Wade Skelton, TriQuint Semiconductor

Page 267 Abstract
15.4

Stress Suppression of Backside Metal in GaAs Devices

Koichiro Nishizawa, Mitsubishi Electric, Katsuhisa Kitano, Mitsubishi Electric and Hirohumi Nakano, Mitsubishi Electric

Page 271 Abstract
16: Thermal & Electrical Characterization
16.1

Evaluating pHEMT Process Improvements Using Wafer Level RF Tests

James Oerth, Skyworks Solutions, Stephen Cousineau, Skyworks Solutions and Sushila Singh, Skyworks Solutions

Page 277 Abstract
16.2

Degradation of pHEMT Performance in BiFETs Caused by Thermal History During HBT Growth, and Suggestions for Improvement

Junichiro Takeda, Hitachi Cable, Ltd., Ryota Isono, Hitachi Cable, Ltd., Shinjiro Fujio, Hitachi Cable, Ltd., Hiroyuki Kamogawa, Hitachi Cable, Ltd., Masae Sahara, Hitachi Cable, Ltd., Takeshi Meguro, Hitachi Cable, Ltd. and Yohei Otoki, Hitachi Cable, Ltd.

Page 281 Abstract
16.3

Failure Investigations on AlGaN/GaN HEMTs for Different Sheet Resistances by Means of Raman Thermography

Helmut Jung, United Monolithic Semiconductors, Michael Hosch, University of Ulm, Reza Behtash, United Monolithic Semiconductors, James R. Thorpe, United Monolithic Semiconductors, Franck Bourgeois, United Monolithic Semiconductors, Stefanie Held, United Monolithic Semiconductors, Herve Blanck, United Monolithic Semiconductors, Andrei Sarua, University of Bristol, Nicole Killat, University of Bristol, Martin Kuball, University of Bristol and Thomas Roedle, NXP Semiconductors

Page 285 Abstract
16.4

Non-Destructive Determination of the Lateral Thermal Conductivity of Novel Substrate Materials Using Thermal Infrared Microscopy

E. R. Heller, Air Force Research Lab, K. Chabak, Air Force Research Lab, V. Miller, Air Force Research Lab, D. Walker, Jr., Air Force Research Lab, M. Trejo, Air Force Research Lab, M. Kossler, Air Force Research Lab, J. K. Gillespie, Air Force Research Lab, A. Crespo, Air Force Research Lab, R. Vetury, RF Micro Devices and G. D. Via, Air Force Research Lab

Page 289 Abstract
16.5

Continuous Improvement of Material Characterization Methodology Through Gage Repeatability and Reproducibility Studies

Arun Chawla, Skyworks Solutions, Mark Borek, Skyworks Solutions and Guoliang Zhou, Skyworks Solutions

Page 295 Abstract
17: Device Packaging Innovation
17.1

Flip-Chip Assembled 7GHz Ultra-Low Phase Noise InGaP HBT Oscillator

Li-Han Hsu, National Chiao Tung University, Dan Kuylenstierna, Chalmers University of Technology, Herbert Zirath, Chalmers University of Technology, Edward Yi Chang, National Chiao Tung University and Chin-Te Wang, National Chiao Tung University

Page 299 Abstract
17.2

EM Simulation and Development of Wafer-Level Micro-Packaging Technique for GaAs-Based RF MEMS Switches

Sandeep Chaturvedi, Gallium Arsenide Enabling Technology Center, Sangam V. Bhalke, Gallium Arsenide Enabling Technology Center, Mahadeva K. Bhat, Solid State Research Lab - Timarpur, G. Sai Saravanan, Gallium Arsenide Enabling Technology Center, R. Muralidharan, Gallium Arsenide Enabling Technology Center and Shiban K. Koul, Indian Institute of Technology - Delhi

Page 303 Abstract
17.3

Novel Packaging Solutions for GaN Power Electronics: Silver-Diamond Composite Packages

M. Faqir, University of Bristol, T. Batten, University of Bristol, T. Mrotzek, Plansee SE, S. Knippscheer, Plansee SE, L. Chalumeau, Egide, M. Massiot, Egide, M. Buchta, United Monolithic Semiconductors, James R. Thorpe, United Monolithic Semiconductors, Herve Blanck, United Monolithic Semiconductors, S. Rochette, Thales Alenia Space, O. Vendier, Thales Alenia Space and Martin Kuball, University of Bristol

Page 307 Abstract
17.4

Quilt Packaging: A Robust Coplaner Chip-to-Chip Interconnect Offering Very High Bandwidth

David Kopp, University of Notre Dame, M. Ashraf Khan, University of Notre Dame, Scott Garvey, University of Notre Dame, Kristen Anderson, University of Notre Dame, Jason Kulick, University of Notre Dame, Alfred M. Kriman, University of Notre Dame, Gary H. Bernstein, University of Notre Dame and Patrick J. Fay, University of Notre Dame

Page 309 Abstract
17.5

Cavity Structure GaAs FETs with High Humidity Resistance

Yasuki Aihara, Mitsubishi Electric, Toshiaki Kitano, Mitsubishi Electric, Kazuyo Endo, Mitsubishi Electric, Kenji Hosogi, Mitsubishi Electric and Hiroshi Fukumoto, Mitsubishi Electric

Page 313 Abstract
18: Interactive Forum
18.1

Sub Half-Micron Structures with Profile Control on Compound Semiconductor Substrates based on Conventional i-Line Lithography

Dominik Schrade-Koehn, University of Ulm, Philipp Leber, University of Ulm, Reza Behtash, United Monolithic Semiconductors, Herve Blanck, United Monolithic Semiconductors and Hermann Schumacher, University of Ulm

Page 319 Abstract
18.2

Backside SIMS Analysis and Accelerated Thermal Aging of Optimally Alloyed Ohmic Contacts to MESFETs

G. Sai Saravanan, Gallium Arsenide Enabling Technology Center, Mahadeva K. Bhat, Solid State Research Lab - Timarpur, Sandeep Chaturvedi, Gallium Arsenide Enabling Technology Center, M. N. Mudholkar, Gallium Arsenide Enabling Technology Center and R. Muralidharan, Gallium Arsenide Enabling Technology Center

Page 323 Abstract
18.3

Data Analysis for Yield Improvement Using TIBCO Spotfire Data Analysis Software

Andrew Choo, TriQuint Semiconductor and Thorsten Saeger, TriQuint Semiconductor

Page 327 Abstract
18.4

LED Structure Grown on 200mm Sapphire and Silicon Substrates

R. Schreiner, AIXTRON, A. Boyd, AIXTRON, O. Rockenfeller, AIXTRON, J. Kaeppeler, AIXTRON, B. Schineller, AIXTRON and M. Heuken, AIXTRON

Page 333 Abstract
18.5

TaN Resistor Pr18.5.098.pdfocess Development and Integration

M. J. Martinez, Sandia National Laboratory, F. H. Austin, LMATA, J. B. Clevenger, Sandia National Laboratory, A. J. Grine, Sandia National Laboratory, G. A. Patrizi, Sandia National Laboratory, K. Romero, LMATA, P. S. Vigil, LMATA, S. Wolfley, Sandia National Laboratory and C. T. Sullivan, Sandia National Laboratory

Page 337 Abstract
18.6

N-Polar GaN-Based Highly Scaled Self-Aligned MIS-HEMTs with State-of-the-Art fT x LG Product of 16.8 GHz-um for Mixed Signal Applications

Nidhi, University of California, Santa Barbara, Sansaptak Dasgupta, University of California, Santa Barbara, David F. Brown, University of California, Santa Barbara, Stacia Keller, University of California, Santa Barbara, James S. Speck, University of California, Santa Barbara and Umesh K. Mishra, University of California, Santa Barbara

Page 341 Abstract
18.7

Selected Technological Improvements of SiC Power Devices in Order to Achieve High Performance Combined with Outstanding Ruggedness

Peter Friedrichs, SiCED Electronics Development

Page 345 Abstract
18.8

Debris Reduction in GaAs Wafer Dicing Process

Kuan-Hsuan Ho, WIN Semiconductor, Shih-Ming Lin, WIN Semiconductor, Huang-Wen Wang, WIN Semiconductor, Kevin Huang, WIN Semiconductor, Ping-Wei Chen, WIN Semiconductor and Chang-Hwang Hua, WIN Semiconductor

Page 349 Abstract
18.9

Numerical Analysis of the Effect of Grain Size and Defects on the Performance of CIGS Solar Cells

G. Sozzi, University of Parma, F. Troni, University of Parma and R. Menozzi, University of Parma

Page 353 Abstract
18.10

Waste Reduction in Lapping Sapphire and Other Compound Semiconductor Materials


Elina Kashman, Engis Corp and Mark Irvin, Engis Corp

Page 357 Abstract
       


 

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